Infineon Technologies Ag

Infineon Technologies Austria Ag

Robert Hartl

Evelyn Napetschnig

Markus Beninger-Bina

Mark Harrison

Andreas Behrendt

Mario Barusic

Georg Schinner

Aleksander Hinz

Peter Imrich

Reinhard Lindner

Sandra Wirtitsch

A semiconductor device and a method of producing the semiconductor device are described. The semiconductor device includes: a semiconductor substrate; a metallization layer over the semiconductor substrate; a plating over the metallization layer, the plating including NiP; a passivation over the metallization layer and laterally adjacent the plating such that a surface of the plating that faces away from the semiconductor substrate is uncovered by the passivation, wherein a seam is present along an interface between the passivation and the plating; and a structure that covers the seam along a periphery of the plating and delimits a bondable area for the plating. The structure extends from the periphery of the plating onto the passivation. The structure includes an imide having a curing temperature below a recrystallization temperature of the NiP or an oxide having a deposition temperature below the recrystallization temperature of the NiP.

Semiconductor device and method of producing a semiconductor device

According to various embodiments, a method for processing a semiconductor region, wherein the semiconductor region comprises at least one precipitate, may include: forming a precipitate removal layer over the semiconductor region, wherein the precipitate removal layer may define an absorption temperature at which a chemical solubility of a constituent of the at least one precipitate is greater in the precipitate removal layer than in the semiconductor region; and heating the at least one precipitate above the absorption temperature.

Method for processing a semiconductor region and an electronic device

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Wuppertal, Germany

Robert Hartl