Karl Suss America, Inc.

Sal, Inc.

Robert Harrison Macklin

Robert Allen Selzer

Franz Ludwig Rauch

Walter Bohler

Seth A Wright

Heinz Siegert

Klaus Simon

William Rudolf Friml

Joe Baker Gagnon

Thomas M Price

The present invention is directed to the production of high quality semi-conductor devices created at speeds and in sizes that far exceed current x-ray lithography capabilities. The steps involved in the method include the use and development of horizontal beams from a synchrotron or point source of x-ray beams; preparation of submicrometer, transverse horizontal and vertical stepper stages and frames; providing a stepper base frame for the proper housing and mating of the x-ray beam; minimizing the effects of temperature and airflow control by means of a environmental chamber; transporting, handling and prealigning wafers and other similar items for tight process control; improving the control and sensing of positional accuracy through the use of differential variable reluctance transducers; controlling the continuous gap and all six degrees of freedom of the wafer being treated with a multiple variable stage control; incorporating alignment systems using unambiguous targets to provide data to align one level to the next level; beam transport, shaping or shaping devices, to include x-ray point sources; using an inline collimator or concentrator for collimating or concentrating the x-ray beams; and, imaging the mask pattern at the precise moment for optimum effectiveness.

Method of improving x-ray lithography in the sub 100nm range to create high quality semiconductor devices

A probe system for probing a device under test (DUT) includes a DUT support chuck for holding the DUT. A plurality of flexible probe needles are positioned along a 'Z' axis that extends orthogonally from the surface of the DUT. Each probe needle is movable with respect to the DUT support chuck. A motor provides for relative movement, at least along the Z axis, between the probe needles and the DUT support chuck. A variable focus imaging system is positioned along the Z axis and provides image signals to a control processor. The control processor causes the variable focus imaging system to image the surface of the DUT and at least one probe needle. The control processor is responsive to a determined distance between focal planes containing the DUT surface and probe needle to cause the motor to move the probe needle and the DUT surface into physical engagement. The motor is further controlled to provide a relative movement distance between the probe needle and the DUT that is greater than the determined distance between the focal planes, thereby enabling a predetermined contact pressure to be obtained.

Probe system with automatic control of contact pressure and probe

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Richmond, VT, United States of America

Robert Harrison Macklin