Leland Stanford Junior University

Other

University of California

Robert H Hammond

Theodore H Geballe

Kookrin Char

Aharon Kapitulnik

Malcolm R Beasley

Pin-Chin Connie Wang

Martin M Fejer

Paul N Arendt

James R Groves

Mark Lee

Roger W Barton

Byungdu Oh

Stephen S Laderman

Khiem B Do

Weizhi Wang

Steven J Benerofe

Charles H Ahn

Michio Naito

Andy Kent

Ann F Marshall

The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

Dual ion beam assisted deposition of biaxially textured template layers

Flow is described by first variables related to a coordinate system, and by at least one second flow-related variable such as friction factor or Reynolds number unrelated to the coordinate system, wherein the first variables are separable or substantially separable from the second variables. The method includes determining average velocities of the fluid on two paths, or taking a first path measurement and at least one point measurement, selected such that combining the first path measurement and the second measurement forms an expression independent of the second variable. In one embodiment, first and second path measurements are combined in accordance with the velocity relationships given by the Pao equation to produce a flow measurement which is independent of the friction factor. A single calibration then allows the meter to be used on diverse conduits with different wall roughness or friction factor. The system also yields a non-invasive measure of the friction factor. A conventional flow meter may be set up by solving for flow profile and analytically determining a meter factor or appropriate measurement path. The measurements may be combined to eliminate the second variable, or to determine a chord on which the measured velocity equals the mean flow velocity across the conduit cross-sectional area. Alternatively, the two transit times may combined to determine a meter factor, or a known flow profile may be used to determine a single chord along which the transit time measurements relate to flow in a manner independent of the second variable.

Ultrasonic measurement system with chordal path

A thin film of material having a rock-salt-like structure is deposited on a smooth amorphous substrate surface by ion beam assisted deposition.

Thin films having rock-salt-like structure deposited on amorphous surfaces

An atomic absorption apparatus using a laser for producing a light beam having a characteristic frequency f, typically ranging from several MHz to several GHz, and a characteristic polarization for measuring the absorption of that light beam by atoms of interest. The apparatus has a modulator to generate a modulating signal to modulate the characteristic frequency f and produce a phase-modulated light beam. The apparatus includes a domain where the specific atoms are located. This domain is positioned in the path of the phase-modulated light beam such that the phase-modulated light beam encounters the specific atoms when passing through the domain and some of the specific atoms absorb a portion of the phase-modulated light beam. Typically, the domains containing the atoms of interest include process chambers for vacuum coating, ion milling, sputtering, mass spectroscopy vapor coating or deposition, and the like. The amount of light absorbed depends on the motion of the atoms relative to the phase-modulated light beam.

Atomic absorption apparatus using a phase-modulated light beam

Novel superconducting oxide compositions of the formulas (YBa.sub.2 Cu.sub.3.25).sub.a O.sub.z and Y.sub.2 Ba.sub.4 Cu.sub.8 O.sub.20-x (248) are provided which can have an ordered defect structure stacked on one axis. Mi

High-temperature superconductors

A method of forming a superconducting YBa.sub.2 Cu.sub.3 O.sub.7-x thin film with selected crystal orientation is described which comprises the steps of sputtering simultaneously Y, Ba and Cu onto the surface of a substrate, introducing oxygen at said surface during deposition, controlling the stoichiometry of the elements Y, Ba or both richer or poorer than the 1:2:3 stoichiometry within a few atom percent and followed by annealing to selectively grow an a-axis or a c-axis oriented film of YBa.sub.2 Cu.sub.3 O.sub.7-x.

Method of forming superconducting YBa.sub.2 Cu.sub.3 O.sub.7-x thin

Growing community of inventors

Los Altos, CA, United States of America

Robert H Hammond