Mattson Technology, Inc

Raychem Limited

Lam Research Corporation

Robert Guerra

Craig Ranft

Rene George

Pravin L Soni

Wolfgang Helle

Stephen E Savas

Allan B Wiesnoski

Sai Mantripragada

Ying Holden

Laizhong Luo

Nicole Kuhl

John P Zajac

Stephen F Powell

Timothy R Webb

Jeffrey V Musser

Brady F Cole

Michael Nordling

Leroy Luo

Plasma systems and methods for supplying activation energy to remove cross-linked photoresist crust using ion bombardment of the substrate from a plasma, at reduced temperature, achieved in part by operating the processing chamber at low pressures. Reduced temperatures prevent &ldquo;popping&rdquo; of the photoresist which can cause particulate contamination. The gas flow may comprise a principal gas, an inert diluent gas, and an additive gas. Principal gases for HDIS may comprise oxygen, hydrogen, and water vapor at pressures less than about 200 mTorr and a bias may be applied to the substrate support. When low-k dielectric material is present on vertical surfaces, reduced ion bombardment on vertical surfaces may be used, and a protective layer may be deposited on those surfaces.

Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing

A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.

Systems and methods for two-sided etch of a semiconductor substrate

Systems and methods are provided for selectively removing unwanted material from a surface of a semiconductor wafer without causing damage to or etching of underlying portions of the semiconductor. One embodiment of the invention includes the use of reactive species from a plasma source to facilitate the removal of residues remaining after metal etching on a silicon wafer, where the gases employed in creating the plasma include hydrogen, halogens such as fluorine, and little or no oxygen.

Downstream surface cleaning process

Variable mode plasma system and method for processing a semiconductor wafer. The modulation of the plasma potential relative to the semiconductor wafer is varied for different process steps. A capacitive shield may be selectively grounded to vary the level of capacitive coupling and modulation of the plasma. Process pressures, gases and power level may also be modified for different process steps. Plasma properties may easily be tailored to specific layers and materials being processed on the surface of the wafer. Variable mode processes may be adapted for (i) removal of photoresist after high-dose ion implant, (ii) post metal etch polymer removal, (iii) via clean, and (iv) other plasma enhanced processes.

Systems and methods for variable mode plasma enhanced processing of semiconductor wafers

A method in a plasma processing chamber for etching through a selected portion of a metallization layer of a wafer's layer stack. The method includes the step of etching at least partially through the metallization layer of the layer stack with an etchant source gas that consists essentially of chlorine and nitrogen. In another embodiment, the metallization layer comprises aluminum, and the flow ratio of the chlorine to the nitrogen ranges from about 1:1 to about 10:1. More preferably, the flow ratio of the chlorine to the nitrogen ranges from about 1:1 to about 4:1 and preferably ranges from about 1:1 to about 2:1.

High density plasma etching of metallization layer using chlorine and

A curable adhesive composition comprises a thermoplastic fluoropolymer, an elastomeric fluoropolymer, an ethylene copolymer and a crosslinking component. The composition preferably also comprises a tackifier. The crosslinking component preferably comprises a free radical generator such as a peroxide and a co-crosslinking agent comprising a multifunctional monomer. The adhesive is particularly useful with heat recoverable articles and bonds exceptionally well to fluoropolymer substrates.

Curable adhesives

Heat recoverable soldering devices comprising a heat recoverable tubular article having at least one open end, and containing a solder insert, is provided with a curable adhesive insert between the solder insert and the open end. The curable adhesive melts, flows and cures when heat is applied to recover the article. The adhesive cures such that its viscosity increases to a value of at least 1.5 its initial viscosity during recovery of the article. Curing of the adhesive inhibits flow of the adhesive through the open end of the article and/or into the solder connection formed between two (or more) elongate bodies inserted into the article.

Heat-recoverable soldering device

A curable adhesive composition comprises a thermoplastic fluoropolymer, an elastomeric fluoropolymer, an ethylene copolymer and a crosslinking component. The composition preferably also comprises a tackifier. The crosslinking component preferably comprises a free radial generator such as a peroxide and a co-crosslinking agent comprising a multifunctional monomer. The adhesive is particularly useful with heat recoverable articles and bonds exceptionally well to fluoropolymer substrates.

Growing community of inventors

Fremont, CA, United States of America

Robert Guerra