Texas Instruments Corporation

Robert Graham Shaw

Sameer P Pendharkar

Hideaki Kawahara

Hong Yang

Lily Springer

Eugen Mindricelu

Wen-Hwa M Chu

Haim Horovitz

Paul C Mannas

A fuse circuit includes a substrate, a top semiconductor layer doped a first conductivity type having a well doped a second conductivity type formed therein including a well contact. A field dielectric layer (FOX) is on the semiconductor layer. A fuse is on the FOX within the well including a fuse body including electrically conductive material having a first and second fuse contact. A transistor is formed in the semiconductor layer including a control terminal (CT) with CT contact, a first terminal (FT) with FT contact, and a second terminal (ST) with a ST contact. A coupling path is between the CT contact and well contact, a first resistor is coupled between the FT contact and CT contact, and a coupling path is between the ST contact and the first fuse contact.

IC having failsafe fuse on field dielectric

Validation of at least some of a proposed semiconductor design layout is disclosed. According to one or more aspects of the present invention, a first voltage dependent design rule is applied to an edge of an area of the layout if the edge is not covered by a pseudo layer. A second voltage dependent design rule is, on the other hand, applied to the edge of the area if the edge is covered by the pseudo layer.

Edge recognition based high voltage pseudo layer verification methodology for mix signal design layout

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Nashua, NH, United States of America

Robert Graham Shaw