Mattson Technology, Inc

Beijing E-town Semiconductor Technology, Co., Ltd

Robert George Elliston

Vijay Matthew Vaniapura

Li Diao

HaiAu PhanVu

Chan-Yun Lee

David Gilbert

James Paris

Tom Tillery

A method for removing photoresist, an oxidation layer, or both from a semiconductor substrate is disclosed. The method includes placing a substrate in a processing chamber, the processing chamber separate from a plasma chamber for generating a non-oxidizing plasma to be used in treating the substrate; generating a first non-oxidizing plasma from a first reactant gas and a first carrier gas in the plasma chamber, wherein the first non-oxidizing plasma comprises from about 10% to about 40% of the first reactant gas, wherein the first reactant gas has a flow rate of from about 100 standard cubic centimeters per minute to about 15,000 standard cubic centimeters per minute, and wherein the first carrier gas has a flow rate of from about 500 standard cubic centimeters per minute to about 20,000 standard cubic centimeters per minute; and treating the substrate by exposing the substrate to the first non-oxidizing plasma in the processing chamber.

Method for high aspect ratio photoresist removal in pure reducing plasma

Growing community of inventors

San Jose, CA, United States of America

Robert George Elliston