Agilent Technologies, Inc.

Avago Technologies General IP (singapore) Pte. Ltd.

Robert G Long

David W Hula

Mark D Crook

Ricky D Snyder

Nathan Perkins

Jonathan Kwadwo Abrokwah

Scott A Rumery

Ricky Snyder

A semiconductor device that includes a Group III-V semiconductor substrate, circuit elements in and on the substrate, a first metal layer over the substrate, and an interlayer dielectric (ILD) layer. The ILD layer defines a via that extends through it to the first metal layer. Over the ILD layer is thick second metal layer and a passivation layer. The second metal layer includes an interconnect that extends through the via into contact with the first metal layer. The second metal layer is patterned to define at least one conductor. The passivation layer covers the second metal layer and the interlayer dielectric layer, and includes stacked regions of dielectric material. Ones of the regions under tensile stress alternate with ones of the regions under compressive stress, such that the passivation layer is subject to net compressive stress.

Passivation for group III-V semiconductor devices having a plated metal layer over an interlayer dielectric layer

An integrated circuit metallization structure using a titanium/aluminum alloy, and a method to generate such a structure, provide reduced leakage current by allowing mobile impurities such as water, oxygen, and hydrogen to passivate structural defects in the silicon layer of the IC. The titanium layer of the structure is at least partially alloyed with the aluminum layer, thereby restricting the ability of the titanium to getter the mobile impurities within the various layers of the IC. Despite the alloying of the titanium and aluminum, the metallization structure exhibits the superior contact resistance and electromigration properties associated with titanium.

Integrated circuit metallization using a titanium/aluminum alloy

An optical barrier made of tungsten (W) or titanium-tungsten (TiW). A layer of the optical barrier material is deposited over a transparent layer such as indium tin oxide (ITO). The optical barrier material is then patterned using photolithography processing steps and a dry etchant. The patterned optical barrier material acts as a light-shielding layer over a light-sensing device to form a dark reference device or dark pixel.

Optical barrier and methods for forming the optical barrier without etching a transparent layer below the optical barrier

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Fort Collins, CO, United States of America

Robert G Long