Other

Intel Corporation

Armco Inc.

Integrated Device Technology, Inc.

USA As Represented by Secretary of the Navy

Allied Corporation

Rtx Corporation

Graphic Management Associates, Inc.

Muller Martini Corp.

Muller Martini Mailroom Systems, Inc.

Robert G James

Tahir Ghani

Harold W Kennel

Mark Y Liu

Jacob M Jensen

Randy R Seidel

Gary L Davenport

Eric Bader

Darrell E Pav

Douglas Walter

Daniel Langengger

David Walter Carr

Harry C Noll, Jr

Peter J Braschoss

Barry D Yekel

Alan M Lovelace

David A Berry

Jacob H Malka

Weimin Han

Todd H Gardner

Harry Noll

Ashutosh Sagar

Chao-Kai Liang

Peter Braschoss

Miye Hopkins

K David Lyons

Barry Yeakel

Paul M Kendig

James M Lawther

Robert E Fisher

Richard R Palm

Renee James

A heat exchanger for controlling case leakage including a joint formed between a first case portion proximate a second case portion; a gap formed within the joint; and the heat exchanger operatively coupled to the case proximate the joint, the heat exchanger configured to inhibit air flow through the gap.

Engine case leakage mitigation heat exchanger

Stacked thermal process chamber module for remote radiative heating of semiconductor device workpieces. A stacked thermal process module may include a stack of thermal process chambers and one or more generators of electromagnetic radiation. The electromagnetic radiation may be transported from a generator remote from the process chambers through one or more waveguides, thereby minimizing the volume and/or cleanroom footprint of the stacked thermal process chamber module. A waveguide may terminate in a process chamber so that electromagnetic radiation delivered during a thermal process may be coupled into one or more materials of the workpiece. The radiative heating process may overcome many of the limitations of thermal process chambers that instead employ a local heat source located within a process chamber.

Stacked thermal processing chamber modules for remote radiative heating in semiconductor device manufacture

Portion of a mailbox

The present invention relates to a mailbox. The mailbox includes an extended downward sloping chute into and through which mail and packages destined for the mailbox's owner can be deposited. The length and orientation of the downward sloping chute makes it difficult if not impossible for the mailbox contents to be accessed and removed through the downward sloping chute. A locked door in the main portion of the box is provided to allow controlled and authorized access to the box's contents.

Mailbox with an extended downward sloping chute

A non-planar transistor including partially melted raised semiconductor source/drains disposed on opposite ends of a semiconductor fin with the gate stack disposed there between. The raised semiconductor source/drains comprise a super-activated dopant region above a melt depth and an activated dopant region below the melt depth. The super-activated dopant region has a higher activated dopant concentration than the activated dopant region and/or has an activated dopant concentration that is constant throughout the melt region. A fin is formed on a substrate and a semiconductor material or a semiconductor material stack is deposited on regions of the fin disposed on opposite sides of a channel region to form raised source/drains. A pulsed laser anneal is performed to melt only a portion of the deposited semiconductor material above a melt depth.

Pulsed laser anneal process for transistor with partial melt of a raised source-drain

Pulsed laser anneal process for transistors with partial melt of a raised source-drain

A pulsed-laser anneal technique includes performing an implant of a selected region of a semiconductor wafer. A co-constituent implant of the selected region is performed, and the pulsed-laser anneal of the selected region performed. A pre-amorphizing implant of the selected region can also be performed. In one embodiment, the implant of the selected region is performed as an insitu implant. In another embodiment, the co-constituent implant is performed as an insitu non-donor implant. In yet another embodiment, the implant and the co-constituent implant of the selected region are performed as an insitu donor and co-constituent implant.

Method for forming superactive deactivation-resistant junction with laser anneal and multiple implants

Laser anneal to melt regions of a microelectronic device buried under overlying materials, such as an interlayer dielectric (ILD). Melting temperature differentiation is employed to selectively melt a buried region. In embodiments a buried region is at least one of a gate electrode and a source/drain region. Laser anneal may be performed after contact formation with contact metal coupling energy into the buried layer for the anneal.

Selective laser annealing process for buried regions in a MOS device

The present invention discloses an improved insert machine for inserting flat material into an open pocket and, more particularly, to a straight line insert machine employed for printed matter such as newspapers. The machine includes an all-electronic control system for controlling machine functions. The control system includes at least one central control computer running under software control and a plurality of network controllers, all coupled together via a controller area network (CAN) bus. Electronic control messages for controlling machine elements are sent among the computers and controllers using a novel message protocol to enable both broadcast messages and individual messages to be employed.

Insert machine

A system that includes a host and a peripheral device. The host transmits a packet that includes a command and a flow control field. The peripheral device receives the packet and has the ability to execute the command, wherein the peripheral device can determine whether the command can be processed in a timely manner, and can update the packet's flow control field with flow control data based on the determination. The host receives the updated packet and has the ability to adjust the flow control of subsequent packets to the peripheral device based on the flow control data in the updated packet.

Method of handling flow control in daisy-chain protocols

A method for improving the speed and efficiency of transmitting data between two components in which the transmitted data is sent, at least partly, through a serial bus is shown. According to the method, the fields in the data frames being transmitted between the components are of a fixed length regardless of the amount of data that the receiving device can receive at one time. The data bits of the fixed-length frame correspond to the signals accepted as input by the receiving component.

Method for deterministic timed transfer of data with memory using a serial interface

A method and apparatus for improved efficiency in protocols using character coding have been disclosed.

Method and apparatus for improved efficiency in protocols using character coding

Apparatus for inducing electrically charged alignment changes in biological tissue includes a generally flat translucent cavity containing a volume of gas that includes water vapor, carbon dioxide and other similarly common molecules that is charged along one surface by a sequence of pulses of electrical charge each of a potential sufficient to excite the common molecules to a higher state. The opposite side of the cavity is then conformed for intimate contact with the skin of a person, thus communicating the right hand spin electromagnetic pulses associated with each excitation level change into the tissue. A pulsed coil is then provided in an alignment generally parallel to the plane of the cavity to polarize the clockwise electromagnetic emissions associated with the changes in the excitation states.

Apparatus for applying pulsed charge to living matter

Growing community of inventors

Bakersfield, CA, United States of America

Robert G James