Raytheon Company

Robert E Leoni

James S Wilson

Matthew A Morton

Brian D Schultz

Kiuchul Hwang

Colin Steven Whelan

Jason C Soric

John Logan

Francois Y Colomb

Nicholas J Kolias

William P Hull, Jr

Thomas Benjamin Reed

Traugott Carl Ludwig Gerhard Soliner

A semiconductor device having a substrate, a pair of Group III-Nitride layers on the substrate forming: a heterojunction with a 2 Dimensional Electron Gas (2DEG) channel in a lower one of the pair of Group III-Nitride layers, a cap beryllium doped Group III-Nitride layer on the upper one of the pair of Group III-Nitride layers; and an electrical contact in Schottky contact with a portion of the cap beryllium doped, Group III-Nitride layer.

Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers

A transmission line transformer having a time delay network having a signal terminal and a pair of output terminals connected to the signal terminal through a corresponding one of a pair of time delay elements, the delay line elements having different time delays. A pair of transmission lines, each one having a pair of electrically coupled elements. A first one of the elements in one of the transmission lines has a first end connected to one of the pair of output terminals. A second one of the elements in such one of the transmission lines has a second end connected to a second end of one of the pair of elements in the other one of the transmission lines. The first one of the pair of elements in the other one of the pair of transmission lines is coupled to a second one of the pair of output terminals.

Transmission line transformers

A selective frequency limiter having a magnetic material and a slow wave structure disposed to magnetically couple a magnetic field, produced by electromagnetic energy propagating through the slow wave structure, into the magnetic material.

Frequency selective limiter

Aspects of embodiments according to the present invention are directed toward a circuitry and a method to accurately measure the junction temperature of power amplifier and uses the measurement to enable optimization of performance in the presence of a mismatched load via control of the power amplifier such that corrective action to mitigate effects of the mismatched load can be performed.

Performance optimization of power amplifier

A system having a first optical modulator operates in a non-linear region thereof and fed by: an input radio frequency signal; and, a first optical frequency signal having a wavelength &#x3bb;. A second optical modulator operates in a linear region thereof and fed by: a fractional portion of the input radio frequency signal phase shifted relative to the input radio frequency signal by n&#x3c0; radians where n is an odd integer; and a second different optical frequency signal wavelength &#x3bb;. A first photodiode is fed by an output of the first optical modulator. A second photodiode is fed by an output of the second optical modulator and a fractional portion of an output of the first optical modulator. An amplifier is fed by the second photodiode. A subtractor is fed by the amplifier and the first photodiode.

Growing community of inventors

Somerville, MA, United States of America

Robert E Leoni