Gould Inc.

Motorola Corporation

Amersham Biosciences Ab

Robert E Lajos

Minas Hagop Tanielian

Allyson J Beuhler

Charles K Brush

Donald J Koneval

Walter H Eisele

Helmut H Krueger

John McGowen

Travis Johnson

Scott Blackstone

Heinz Hermann Busta

Kul B Bhasin

The present invention provides solid supports (e.g., glass) and polymer hydrogels (particularly polymer hydrogel arrays present on a solid support) comprising one or more reactive sites for the attachment of biomolecules, as well as biomolecules comprising one or more reactive sites for attachment to solid supports and polymer hydrogels. The invention further provides novel compositions and methods for the preparation of biomolecules, solid supports, and polymer hydrogels comprising reactive sites. The invention also provides for preparation of crosslinked solid supports, polymer hydrogels, and hydrogel arrays, wherein one or more biomolecules is attached by means of the reactive sites in a photocycloaddition reaction. Advantageously, according to the invention, crosslinking of the hydrogel and attachment of biomolecules can be done in a single step.

Methods and compositions for attachment of biomolecules to solid supports, hydrogels, and hydrogel arrays

Thin free standing single crystal films can be produced by sputter depositing a layer of stressable metal onto a single crystal substrate, treating the composite so produced to effect stressing of the metal layer which then peels away with a portion of the single crystal substrate attached to the metal layer. The free standing film thus produced has typical thickness in the order of tens of micrometers. The metal layer can subsequently be removed by acid etching or other suitable etching techniques, to leave the free standing single crystal film, having a thickness from about 5 microns to about 50 or more.

Method of making thin free standing single crystal films

The subject invention is a method of sputtering a material on a substrate in which the substrate is first locally heated so that the mobility on the surface of the substrate is increased to a value E.sub.s. A material is then sputtered on the substrate with a sputtering energy E.sub.k whereby the sum of E.sub.k and E.sub.s is greater than the activation energy required for a chemical reaction to occur between the sputtered surface of the substrate and the sputtered material. In the preferred embodiment, the substrate is silicon and the material to be sputtered is a refractory metal such as titanium.

Method of depositing fully reacted titanium disilicide thin films

A thin film strain gage structure (10, 110) for measuring the strain of an inflectible element (12, 112) wherein the gage is formed on a surface (15, 115) of the element and includes a sensing resistance (16, 116) and an adjusting resistance portion (21, 121). Connecting taps are formed in relationship to the resistors to permit adjustment of the adjusting resistor values by suitable connection to selected ones of the taps. The adjusting resistance is preferably disposed adjacent the sensing resistance so as to be subject to similar ambient conditions. The sensing resistance may be provided in the form of a Wheatstone bridge circuit with the adjusting resistors connected in series with two legs of the bridge. Adjustment of the adjusting resistance may be effected selectively by shorting out portions thereof or by suitably connecting to different portions thereof. In one form, the adjustment is effected so as to provide variable ratio between two portions of the resistance connected between legs of the bridge circuit.

Geometric balance adjustment of thin film strain gage sensors

A thin film strain gage structure (10,110) for measuring the strain of an inflectible element (12,112) wherein the gage is formed on a surface (15,115) of the element and includes a sensing resistance (16,116) and an adjusting resistance portion (21,121). Connecting taps are formed in relationship to the resistors to permit adjustment of the adjusting resistor values by suitable connection to selected ones of the taps. The adjusting resistance is preferably disposed adjacent the sensing resistance so as to be subject to similar ambient conditions. The sensing resistance may be provided in the form of a Wheatstone bridge circuit with the adjusting resistors connected in series with two legs of the bridge. Adjustment of the adjusting resistance may be effected selectively by shorting out portions thereof or by suitably connecting to different portions thereof. In one form, the adjustment is effected so as to provide variable ratio between two portions of the resistance connected between legs of the bridge circuit.

A method and apparatus for detecting the end point of a plasma etching process comprising the use of an optical technique in which light is beamed on the layer to be etched and the resulting beam that is reflected and refracted is detected. Sharply different values of light intensity can be detected when the desired layer is etched and the next layer receives the light beam. A laser is preferably used to obtain an intense and substantially uniform frequency light source.

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Crystal Lake, IL, United States of America

Robert E Lajos