International Business Machines Corporation

Robert E Kilker

David Paul Paulsen

Gregory John Uhlmann

Phil Christopher Paone

John Edward Sheets, Ii

Karl Robert Erickson

Elizabeth Lair Gerhard

Wayne L Vlasak

A climate-controlled vending machine is monitored using data analytics. The climate-controlled vending machine includes a primary storage unit for storing two or more items. A first slot of an item is determined to be available within a secondary storage unit of the climate-controlled vending machine. The secondary storage unit is a climate-controlled unit. A first item, of the two or more items within the primary storage unit, is transferred to the first slot of the secondary storage unit. The first item within the first slot of the secondary storage unit is altered to a first condition. A selection from a first user is received. In response to the reception of the selection of the first item, the first item is dispensed to the user from a dispensary unit, wherein the item is being of the first condition. The first slot is replenished with a replacement item from the primary storage.

Analytics based climate control in vending machines

A circuit has a wordline with an NVM element utilizing a first FET coupled to bitline true and a second FET coupled to bitline complement. A NFET coupled to the bitline complement is configured to pull bitline true toward ground in response to bitline complement reaching a first voltage. One or more wordline drivers are coupled to the NVM element such that a first path from a wordline driver is coupled to the first FET while a second path from a wordline driver is coupled to the second FET. The first path is current-limited in comparison to the second path, such that a first slew rate between a wordline driver and the first FET is slower than a second slew rate between a wordline driver and the second FET. The slew rate disparity allows the bitline complement to reach the first voltage.

Creating default states for non-volatile memory elements

A memory array has a NVM element with a plurality of FETs. A first set of FETs of the plurality of FETs is coupled to a bitline true of the memory array. The first set of FETs has a first channel width. A second set of FETs of the plurality of FETs is coupled to a bitline complement of the memory array. The second set of FETs has a second channel width. The first channel width is greater than the second channel width. The channel width disparity provides the NVM element of the unprogrammed memory array with a default state.

Multiple FET non-volatile memory with default logical state

Voltage is increased on a wordline signal. The wordline signal is applied to a programmed FET and an unprogrammed FET of a memory cell. The programmed FET has a higher threshold voltage than the unprogrammed FET. The programmed FET is connected to a first bitline and the unprogrammed FET is connected to a second bitline. It is determined that the second bitline has reached a threshold voltage. In response to determining the second bitline has reached the threshold voltage, the first bitline is pulled towards ground. A signal is output based on a low voltage of the first bitline and a high voltage of the second bitline.

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Rochester, MN, United States of America

Robert E Kilker