International Business Machines Corporation

Robert E Bendernagel

Victor J Silvestri

Pavel Smetana

Kyong-Min Kim

Thomas H Strudwick

William H White

Devendra K Sadana

Ghavam G Shahidi

Keith E Fogel

Sandip Tiwari

Bijan Davari

David C Ahlgren

Martin Revitz

Russell C Lange

Kwang Su Choe

A patterned SOI/SON composite structure and methods of forming the same are provided. In the SOI/SON composite structure, the patterned SOI/SON structures are sandwiched between a Si over-layer and a semiconductor substrate. The method of forming the patterned SOI/SON composite structure includes shared processing steps wherein the SOI and SON structure are formed together. The present invention also provides a method of forming a composite structure which includes buried conductive/SON structures as well as a method of forming a composite structure including only buried void planes.

Formation of patterned silicon-on-insulator (SOI)/silicon-on-nothing (SON) composite structure by porous Si engineering

A semiconductor structure including a doped semiconductor substrate defining a surface. A buffer layer of epitaxial semiconductor material overlies the substrate surface, the buffer layer having a relatively higher dopant concentration than the substrate and being virtually free from oxygen precipitation. A layer of intrinsic semiconductor material overlies the buffer layer, and a device layer of epitaxial semiconductor material is situated on the intrinsic layer. The device layer is formed to have a relatively lower dopant concentration than the first layer. Isolation regions extend from a surface of the device layer into the buffer layer for forming an electrically isolated device region in the device layer. At least one active device is formed in the isolated device region.

Semiconductor device structure employing a multi-level epitaxial

Method of manufacturing a semiconductor device structure employing a

A method for fabricating a bipolar transistor having a base doping variation of less than 20% is disclosed. A polysilicon base contact bipolar transistor is formed up to the point just prior to the intrinsic base-emitter formation. The intrinsic base-emitter opening is then reactive ion etched through the polysilicon base contact layer down to and into a single crystal silicon body thereunder, whereby the surface of the single crystal silicon is damaged. A silicon dioxide layer is then grown on the exposed and damaged single crystal silicon to convert the damaged silicon surface into a silicon dioxide layer. The silicon dioxide layer is removed by chemical etching to expose undamaged single crystal silicon. A screen silicon dioxide layer 50 to 500 .ANG..+-.10%, e.g., 180 .ANG., is then formed on the thus exposed undamaged single crystal silicon. The intrinsic base region is then formed by ion implantation through the screen silicon dioxide layer, the emitter region is formed within the intrinsic base region and electrical contact is made to the various elements of the bipolar transistor.

Method for fabricating a bipolar transistor

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Carmel, NY, United States of America

Robert E Bendernagel