Semiconductor Components Industries, LLC

Robert Davis

Michael John Seddon

Bruce Greenwood

Ladislav Seliga

Santosh Menon

Radim Spetik

A method includes forming a plurality of pockets of semiconductor material in a semiconductor substrate. The plurality of pockets are electrically isolated from the semiconductor substrate. The method further involves forming a metal-oxide-semiconductor field-effect transistor (MOSFET) in a pocket of the plurality of pockets, the MOSFET being a vertical trench shielded gate MOSFET. The method further includes forming an electrical connection to a drain region of the MOSFET vertically below a trench and a mesa of the MOSFET.

Configurable low ohmic power circuits

A method, in some embodiments, comprises: receiving a feedback voltage signal generated by a switch-mode power supply; generating an error signal based on a difference between a switching frequency of the switch-mode power supply and a target frequency; and using the error signal to adjust a ripple amplitude of the feedback voltage signal to control said switching frequency in the switch-mode power supply.

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Cranston, RI, United States of America

Robert Davis