Lam Research Corporation

Miasole

Kla Corporation

Beijing Apollo Ding Rong Solar Technology Co., Ltd.

Other

Apollo Precision Fujian Limited

Robert D Tas

Ron Rulkens

Neil Mackie

Daniel R Juliano

John Frederick Corson

Alex Austin

Shashank Ravindra Kulkarni

Jochen Titus

Igor C Ivanov

Paul K Shufflebotham

Mats Larsson

Weijie Zhang

Abdelouahab Ziani

Korhan Demirkan

Robert Zubeck

Randy Dorn

Asit Rairkar

Ajay Saproo

Dan Vitkavage

Nancy E Gilbert

Swati Sevanna

Artur Kolics

Shankar Krishnan

Timothy Joseph Franklin

Joshua Butler

Jason Stephen Corneille

Earl M Jensen

Kevin O'Brien

Steven Douglas Flanders

Giampietro Bieli

Jason R Wright

Joe Laia

Stephen C Jones

An instrumented substrate apparatus is configured to measure wavelength-resolved radiation, such as extreme ultraviolet radiation. The instrumented substrate apparatus includes a substrate and photoelectric sensors on the substrate. The photoelectric sensors include a photoemissive material, a photoelectron collector, and a measurement circuit. The measurement circuit is electrically coupled to the photoemissive material and the photoelectron collector. The measurement circuit is configured to measure a current generated by the photoelectron collectors by a current meter. Such current is used to determine the wavelength-resolved EUV measurement information by a controller on the instrumented substrate apparatus, or by communicating the current to a factory automation system.

Instrumented substrate apparatus

A metrology system may include one or more casings that fit within an interior cavity of a sample transport device, an illumination source within one of the one or more casings, one or more illumination optics within one of the one or more casings for directing illumination from the illumination source to a sample located in the interior cavity of the sample transport device, one or more collection optics within one of the one or more casings for light from the sample in response to the illumination from the illumination source, and one or more detectors within one of the one or more casings for generating metrology data based on at least a portion of the light collected by the one or more collection optics.

Sample transport device with integrated metrology

A solar cell containing a plurality of CIGS absorber sublayers has a conversion efficiency of at least 13.4 percent and a minority carrier lifetime below 2 nanoseconds. The sublayers may have a different composition from each other.

Photovoltaic cell with high efficiency CIGS absorber layer with low minority carrier lifetime and method of making thereof

Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof

A photovoltaic cell includes a p-type copper-indium-gallium-selenide absorber layer, where a content of Cu, In, and Ga in a first portion of the p-type copper-indium-gallium-selenide absorber layer satisfies the equation Cu/(In+Ga)&#x2266;0.3, and where the content is measured in atomic percent.

Photovoltaic cell with copper poor CIGS absorber layer and method of making thereof

An emergency power off system is provided including an emergency power off button, a proximity sensor, and alarm connected to the proximity sensor, wherein the proximity sensor is configured to detect an object within a predetermined distance from the power off button, and further wherein the proximity sensor is configured to activate the alarm when an object is within a predetermined distance from the power off button.

Emergency power-off button with proximity alarm

An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.

Electroless plating system

A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound.

Sodium salt containing CIG targets, methods of making and methods of use thereof

A method of making a photovoltaic device includes forming a compound semiconductor layer including copper, indium, gallium, selenium and sulfur by reactive sputtering at least one target including copper, indium, gallium and a sulfur compound in an atmosphere including selenium.

Sulfur salt containing CIG targets, methods of making and methods of use thereof

An electroless deposition system includes a deposition solution, and saturating the deposition solution with an oxygen concentration in a range from about two thousand parts per million to about twenty thousand parts per million.

Electroless deposition system

Systems having an in-line microwave heater to heat fluids for processing a substrate are provided. An embodiment of a system includes a microelectronic processing chamber, a reservoir for storing a fluid used to process wafers within the chamber, a supply line for transporting the fluid to the chamber, and a microwave heater arranged along the supply line. The system includes processor executable program instructions for operating the microwave heater at parameters configured to heat fluid within the supply line to a temperature greater than a fluid temperature within the reservoir, such as approximately 20&#xb0; C. greater than the reservoir fluid temperature. It is noted that the inclusion of an in-line microwave heater is not limited to microelectronic fabrication systems, but may be used for any system in which heated fluids are used for processing a substrate, such as but not limited to electroplating or electroless plating systems.

Systems incorporating microwave heaters within fluid supply lines of substrate processing chambers and methods for use of such systems

Growing community of inventors

Aromas, CA, United States of America

Robert D Tas