General Electric Company

Memc Electronic Materials, Inc.

Other

Robert D Shelley

John D Holder

Larry E Drafall

Richard L Hansen

Leon A Allen

Peter P Bihuniak

Gordon E Dogunke

Robert M McCutchan

William A Graff

A method of reinforcing a crucible for the containment of molten semiconductor material in a Czochralski process, and of inhibiting formation of dislocations within a single crystal grown by the process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material. The sidewall formation and bottom wall each have an inner and an outer surface. A first devitrification promoter is deposited on the inner surface of the sidewall formation at a temperature below about 600.degree. C. The deposit is such that, when the crucible is heated above 600.degree. C., a first layer of substantially devitrified silica forms on the inner surface which is capable of promoting substantially uniform dissolution of the inner surface and reducing the release of crystalline silica particulates into the molten semiconductor material as a crystal is pulled from the molten semiconductor material. A second devitrification promoter is deposited on the outer surface of the sidewall formation at a temperature below about 600.degree. C. The deposit is such that, when the crucible is heated above 600.degree. C., a second layer of substantially devitrified silica forms on the outer surface which is capable of reinforcing the vitreous silica body.

Methods for improving zero dislocation yield of single crystals

A crucible in which a semiconductor material is melted and held during a crystal growing process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material. The sidewall formation has an inner and an outer surface. A first devitrification promoter on the inner surface of the sidewall formation is distributed such that a first layer of substantially devitrified silica is formed on the inner surface of the crucible which is in contact with the molten semiconductor material when the semiconductor material is melted in the crucible during the crystal growing process. A second devitrification promoter on the outer surface of the sidewall formation is distributed such that a second layer of substantially devitrified silica is formed on the outer surface of the crucible when the semiconductor material is melted in the crucible during the crystal growing process. The first substantially devitrified silica layer is such that it promotes uniform dissolution of the inner surface and in so doing significantly reduces the release of crystalline silica particulates into the molten semiconductor material as a crystal is pulled from the molten semiconductor material. The second substantially devitrified silica layer is such that it reinforces the vitreous silica body.

Surface-treated crucibles for improved zero dislocation performance

A composite fused quartz material is disclosed for processing semiconductor grade silicon material in an improved manner. The modified vitreous material includes a disperse phase of fine size silicon metal particles which are distributed in preselected regions of the fused quartz matrix as a means of exercising temperature control in the various semiconductor processing operations using these fused quartz parts. Such utilization of the modified vitreous material in single crystal silicon rod growth and production of semiconductor grade silicon by diffusion doping is described. A method to produce the modified vitreous material is also disclosed.

Fused quartz member for use in semiconductor manufacture

Copper staining of a borosilicate glass article is described which utilizes a single heating step to produce red coloration in the stained glass. The method utilizes a particular liquid slurry to coat the surface of the glass article being treated which generates copper halide vapors during a single heating step in a controlled atmosphere to produce the desired final red color. Atmosphere control is exercised with non-reducing atmosphere conditions being maintained until the alkali metal ions in the glass surface have been replaced with copper ions and which is followed by conversion to reducing atmosphere conditions to convert the substituted copper ions to the metallic state.

Method of copper staining a glass article

Growing community of inventors

Chesterland, OH, United States of America

Robert D Shelley