General Electric Company

Robert D Black

Stephen Daley Arthur

Peter B Roemer

Robert S Gilmore

Homer H Glascock, Ii

Larry Gene Turner

Antonio A Mogro-Campero

An apparatus for microscopic imaging employing nuclear magnetic resonance is constructed from a cryogenic probe which is situated in a conventional magnetic resonance imaging system. The cryogenic probe employs a number of chambers and cryogenic liquids which cool a superconductor resonator to very low temperatures. A sample tube for containing a small specimen is heated to a temperature above its freezing point by flowing nitrogen gas over the specimen. A secondary resonant circuit is inductively coupled to the superconducting resonator. A transceiver passes RF signals to be transmitted into the specimen through the secondary resonant circuit causing the superconducting resonator to transmit the RF signal into the specimen. The resonator then acts as a receive coil and receives a signal from the specimen which is inductively passed to the secondary resonator circuit from which an image is generated. The use of superconductors having low resistance and low temperatures causes noise to be significantly reduced, and the signal-to-noise ratio to be substantially increased.

Cryogenic probe for NMR microscopy

Wafers which are direct bonded to each other in accordance with prior art processes suffer from voids at their bonded interface. Annealing such composite structures at high temperature and high pressure (for silicon wafers preferably about 1,100.degree. C. and 15,000 psi) eliminates all voids which are not a result of the presence of a particle on one of the wafers at the time of mating.

Method of making direct bonded wafers having a void free interface

A lateral charge control semiconductor device is disclosed wherein a plurality of gate filled trenches are disposed in side-by-side relation within a partially processed semiconductor wafer to define finger portions of a drain region therebetween. A field plate is disposed on the upper surface of the finger portions and a portion of the partially processed wafer is situated beneath the finger portions. Charge control can thus be provided to all surface of the finger portion of the lateral device to maximize the amount of charge control which can be applied to the device. More particularly, the carrier concentration within the finger portion can be increased to reduce the one-resistance of the device during forward conduction, while in a reverse blocking operation, lateral charge control can be applied to couple to the electric field originating with the ionized impurities situated in the drift/drain region to increase the breakdown voltage of the device.

Growing community of inventors

Clifton Park, NY, United States of America

Robert D Black