Topgan Sp. Z O.o.

Inst. Wysokich Cisnien Polskiej Akademii Nauk

Instytut Wysokich Ciśnień Polskiej Akademi Nauk

Instytut Wysokich Cisnien Polskiej Akademii Nauk

Top-Gan Spolka Z Ograniczona Odpowiedzialnoscia

Robert Czernecki

Tadeusz Suski

Izabella Grzegory

Piotr Perlin

Michal Leszczynski

Michal Leszczyński

Michal Bockowski

Szymon Stanczyk

Marcin Sarzynski

Anna Kafar

Boleslaw Lucznik

Szymon Grzanka

Marcin Sarzyński

Katarzyna Holc

The invention relates to an AlInGaN alloy based laser diode, which uses a gallium nitride substrate. It also includes a lower cladding layer, a lower light-guiding layer-cladding, a light emitting layer, an upper light-guiding-cladding layer, an upper cladding layer, and a subcontact layer. The lower light-guiding-cladding layer and the upper light-guiding-cladding layer have a continuous, non-step-like and smooth change of indium and/or aluminum content.

AlInGaN alloy based laser diode

A surface of a substrate consists of a plurality of neighboring stripes. Longer edges of the flat surfaces are parallel one to another and planes of these surfaces are disoriented relatively to the crystallographic plane of gallium nitride crystal defined by Miller-Bravais indices (0001), (11-22) or (11-20). The disorientation angle of each of the flat surfaces is between 0 and 3 degrees and is different for each pair of neighboring flat surfaces. The substrate according to the invention allows epitaxial growth of a layered AlInGaN structure by a MOCVD or MBE method which allow to obtain a non-absorbing mirrors laser diode emitting a light in the wavelength from 380 to 550 nm.

Substrate for epitaxial growth

Growing community of inventors

Kalina, Poland

Robert Czernecki