Stats Chippac Pte. Ltd.

Lucent Technologies Inc.

At+t Corp.

Agere Systems Inc.

Blue Danube Systems, Inc.

At&t Bell Laboratories

Other

Bell Telephone Laboratories

American Telephone & Telegraph Co., At&t Bell Laboratories

Agere Systems Guardian Corp.

At&t Ipm Corp.

Nec Advanced Networks, Inc.

Robert Charles Frye

Kai Liu

Yaojian Lin

King Lien Tai

Pandi Chelvam Marimuthu

Yinon Degani

Haijing Cao

Thomas Dixon Dudderar

Yee Leng Low

Rui Huang

Qing Zhang

Mihai Banu

Edward Alois Rietman

Earl Ryan Lory

Sander Gierkink

Vito Boccuzzi

Thomas Richard Harry

Thaddeus John Gabara

Ashraf W Lotfi

Peter Kiss

Yiping Feng

Harry John Leamy

Josef Ocenasek

Anatoly Feygenson

Joseph Henry Condon

Salvatore Levantino

Joseph E Griffith

Kevin John O'Connor

Maureen Y Lau

Yiu H Wong

Douglas John Dromgoole

Giovanni Marzin

Gregg S Nardozza

Yeong-Joo Loon

Edward A Rietman

Kevin D Cummings

Carroll H Knauer, Executor

Scott C Knauer, Deceased

A method of calibrating a transmitter chain in a phased array system in which a lower guard band is assigned to a lower side of an operating carrier of a communication channel and an upper guard band is assigned an upper side of the operating carrier includes injecting a first calibration tone into the transmitter chain and detecting its arrival at the end of the transmitter chain, at which point a first detected calibration signal is generated. The first detected calibration signal and the injected first calibration tone are then compared to produce a first comparison signal. The transmitter chain's phase and/or gain is then adjusted based on this first comparison signal. The first calibration tone located within one of the lower and upper guard bands of the communication channel of the transmitter chain.

Non-disruptive phased array calibration for FDD and TDD communication systems

Bee swarm trap

A removable module for a phased array, the module including: a circuit board having a ground plane formed on one side of the circuit board; an antenna mounted on and extending away from a topside of the circuit board; circuitry on a backside of the circuit board, the circuitry including an RF front end circuit coupled to the antenna; and a group of one or more first connecters mounted on the backside of the circuit board, the first connectors for physically and electrically connecting and disconnecting the module from a master board through a corresponding group of one or more matching second connectors on the master board, the first connectors on the module having electrically conductive lines for carrying an externally supplied LO signal for the RF front end circuit and an IF signal for or from the RF front end circuit.

Modular phased array

A method involving a serial interconnection system having a first node, a second node, a plurality of calibration nodes that are electrically connected in series by the serial interconnection system, and a plurality of connection nodes corresponding to the plurality of serially connected calibration nodes and electrically connected in series by the serial interconnection system, the method involving: for each of the plurality of calibration nodes performing a measurement procedure involving: injecting a corresponding reference signal into that calibration node; and while the corresponding reference signal is being injected into that calibration node, determining a summation of the phases of signals appearing at the first and second nodes; from the determined phase summations for the plurality of calibration nodes, computing phase corrections for each of the plurality of calibration nodes; and applying the phase corrections to the corresponding plurality of connection nodes.

Distributing coherent signals to large electrical distances over serial interconnections

A signal distribution structure including: a dielectric material; an overlying conducting layer on a first level of the dielectric material; a first signal line on a second level of the dielectric material, the first signal line being physically separated from the overlying conducting layer by the dielectric material; wherein the overlying conducting layer includes a window running parallel to the first signal line, and further comprising within the window a first coupler electrode on the first level of the dielectric material, the first coupler electrode above, parallel to, and electrically isolated by the dielectric material from the first signal line, wherein the first coupler electrode is electrically isolated from the overlying conducting layer along at least most of its periphery.

Coupling of signals on multi-layer substrates

A semiconductor device has a substrate and RF coupler formed over the substrate. The RF coupler has a first conductive trace with a first end coupled to a first terminal of the semiconductor device, and a second conductive trace with a first end coupled to a second terminal of the semiconductor device. The first conductive trace is placed in proximity to a first portion of the second conductive trace. An integrated passive device is formed over the substrate. A second portion of the second conductive trace operates as a circuit component of the integrated passive device. The integrated passive device can be a balun or low-pass filter. The RF coupler also has a first capacitor coupled to the first terminal of the semiconductor device, and second capacitor coupled to a third terminal of the semiconductor device for higher directivity. The second conductive trace is wound to exhibit an inductive property.

Semiconductor device and method of forming directional RF coupler with IPD for additional RF signal processing

A flip chip semiconductor device has a substrate with a plurality of active devices formed thereon. A passive device is formed on the substrate by depositing a first conductive layer over the substrate, depositing an insulating layer over the first conductive layer, and depositing a second conductive layer over the insulating layer. The passive device is a metal-insulator-metal capacitor. The deposition of the insulating layer and first and second conductive layers is performed without photolithography. An under bump metallization (UBM) layer is formed on the substrate in electrical contact with the plurality of active devices. A solder bump is formed over the UBM layer. The passive device can also be a resistor by depositing a resistive layer over the first conductive layer and depositing a third conductive layer over the resistive layer. The passive device electrically contacts the solder bump.

Semiconductor device and method of forming passive devices

A semiconductor wafer contains semiconductor die. A first conductive layer is formed over the die. A resistive layer is formed over the die and first conductive layer. A first insulating layer is formed over the die and resistive layer. The wafer is singulated to separate the die. The die is mounted to a temporary carrier. An encapsulant is deposited over the die and carrier. The carrier and a portion of the encapsulant and first insulating layer is removed. A second insulating layer is formed over the encapsulant and first insulating layer. A second conductive layer is formed over the first and second insulating layers. A third insulating layer is formed over the second insulating layer and second conductive layer. A third conductive layer is formed over the third insulating layer and second conductive layer. A fourth insulating layer is formed over the third insulating layer and third conductive layer.

Semiconductor device and method of forming IPD in fan-out wafer level chip scale package

A semiconductor device has a substrate, first passivation layer formed over the substrate, and integrated passive device formed over the substrate. The integrated passive device can include an inductor, capacitor, and resistor. A second passivation layer is formed over the integrated passive device. System components are mounted to the second passivation layer and electrically connect to the second conductive layer. A mold compound is formed over the integrated passive device. A coefficient of thermal expansion of the mold compound is approximately equal to a coefficient of thermal expansion of the system component. The substrate is removed. An opening is etched into the first passivation layer and solder bumps are deposited over the opening in the first passivation layer to electrically connect to the integrated passive device. A metal layer can be formed over the molding compound or first passivation layer for shielding.

System-in-package having integrated passive devices and method therefor

A semiconductor device has an RF balun formed over a substrate. The RF balun includes a first conductive trace wound to exhibit inductive properties with a first end coupled to a first terminal of the semiconductor device and second end coupled to a second terminal of the semiconductor device. A first capacitor is coupled between the first and second ends of the first conductive trace. A second conductive trace is wound to exhibit inductive properties with a first end coupled to a third terminal of the semiconductor device and second end coupled to a fourth terminal of the semiconductor device. The first conductive trace is formed completely within the second conductive trace. The first conductive trace and second conductive trace can have an oval, circular, or polygonal shape separated by 50 micrometers. A second capacitor is coupled between the first and second ends of the second conductive trace.

Semiconductor device and method of forming RF balun having reduced capacitive coupling and high CMRR

A band-pass filter has a plurality of frequency band channels each including a first inductor having a first terminal coupled to a first balanced port and a second terminal coupled to a second balanced port. A first capacitor is coupled between the first and second terminals of the first inductor. A second inductor has a first terminal coupled to a first unbalanced port and a second terminal coupled to a second unbalanced port. The second inductor is disposed within a first distance of the first inductor to induce magnetic coupling. A second capacitor is coupled between the first and second terminals of the second inductor. A third inductor is disposed within a second distance of the first inductor and within a third distance of the second inductor to induce magnetic coupling. A second capacitor is coupled between first and second terminals of the third inductor.

Semiconductor device having balanced band-pass filter implemented with LC resonators

A semiconductor device has a substrate and conductive layer over the substrate. A resistive element is formed between first and second portions of the conductive layer. A plurality of semiconductor die each with first and second bumps is mounted to the substrate with the first and second bumps electrically connected to the first and second portions of the conductive layer. A test current is routed in sequence through the first portion of the conductive layer, through the first and second bumps, and through the second portion of the conductive layer until continuity failure of the second bump. The test current originates from a single power supply. The test current continues to flow through the resistive element after the continuity failure of the second bump. The continuity failure can be detected by sensing an increase in voltage across the second bump.

Semiconductor device and method of simultaneous testing of multiple interconnects for electro-migration

A wide-band balun device includes a first metallization deposited over a substrate and oriented in a first coil. The first coil extends horizontally across the substrate while maintaining a substantially flat vertical profile. A second metallization is deposited over the substrate and oriented in a second coil. The second coil is magnetically coupled to the first coil and a portion of the second coil oriented interiorly of the first coil. A third metallization is deposited over the substrate and oriented in a third coil. The third coil is magnetically coupled to the first and second coils. A first portion of the third coil is oriented interiorly of the second coil. The third coil has a balanced port connected to the third coil between second and third portions of the third coil.

Miniaturized wide-band baluns for RF applications

A semiconductor device has a substrate and band-pass filter formed over the substrate. The band-pass filter includes a first conductive trace wound to exhibit inductive properties with a first end coupled to a first terminal of the semiconductor device and second end coupled to a second terminal of the semiconductor device, and first capacitor coupled between the first and second ends of the first conductive trace. A second conductive trace is wound to exhibit inductive properties with a first end coupled to a third terminal of the semiconductor device and second end coupled to a fourth terminal of the semiconductor device. The second conductive trace has a different size and shape as the first conductive trace. A second capacitor is coupled between the first and second ends of the second conductive trace. A third conductive trace is wound around the first and second conductive traces to exhibit inductive properties.

Semiconductor device and method of forming high-attenuation balanced band-pass filter

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Piscataway, NJ, United States of America

Robert Charles Frye