Applied Materials, Inc.

Robert Casanova

Vijay D Parkhe

Philip Allan Kraus

Haitao Wang

Daemian Raj Benjamin Raj

Christopher A Rowland

Travis Koh

Daniel Distaso

Liliya Krivulina

Ryan T Downey

Syed A Alam

Peter Standish

Mark Markovsky

Uwe P Haller

Collen Leng

Bharath Kumar Hanchanoor Rathnakara Gowda

Exemplary semiconductor processing systems may include a gas source coupled with a number of processing chambers. The gas source may include a controller. Each chamber may include an exhaust assembly having a foreline and a pump. The systems may include at least one abatement system coupled with each pump. The systems may include a plurality of exhaust lines that extend between each pump and the abatement system. The systems may include a dilution gas source coupled with each exhaust line. The systems may include a mass flow controller coupled between the dilution gas source and each exhaust line. The systems may include a temperature sensor coupled with each exhaust line between the pump and the abatement system. The temperature sensor may be communicatively coupled with the controller of the gas source, which may control flow of a gas to a chamber based on a measurement from the temperature sensor.

Interlock system for processing chamber exhaust assembly

Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying a pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes.

Substrate support with electrically floating power supply

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San Jose, CA, United States of America

Robert Casanova