Arm Limited

Agilent Technologies, Inc.

Arm Physical Ip, Inc.

Robert Campbell Aitken

Bal S Sandhu

George McNeil Lattimore

Vikas Chandra

Lucian Shifren

Azeez Jennudin Bhavnagarwala

Sachin Satish Idgunji

Cezary Pietrzyk

Shidhartha Das

James Edward Myers

David Walter Flynn

Parameshwarappa Anand Kumar Savanth

Akshay Kumar

John Philip Biggs

Piyush Agarwal

Gary Robert Waggoner

David Michael Bull

Krisztian Flautner

Marlin Wayne Frederick, Jr

Brian Tracy Cline

Saurabh Pijuskumar Sinha

Dhrumil Gandhi

Stephen John Hill

Gregory Munson Yeric

Jeff Rearick

David William Howard

Chiloda Ashan Senerath Pathirane

Fidel Muradali

Dipesh Ishwerbhai Patel

Alan Jeremy Becker

John Stephen Walther

Kyungwook Chang

Stuart L Whannel

Haluk Konuk

Murugeswaran Surulivel

Jian-Jin Tuan

Imran Iqbal

Satyanand Vijay Nalam

Chiloda Pathirane

According to one embodiment of the present disclosure, a device comprises a latching circuitry, where the latching circuitry comprises at least one correlated electron random access memory (CeRAM) element. The latching circuitry further comprises a control circuit coupled to the at least one CeRAM element. The control circuit is configured to receive at least one control signal. Based on the at least one control signal, perform at least one of storing data into the latching circuitry and outputting data from the latching circuitry.

CES-based latching circuits

Subject matter disclosed herein may relate to generation of programmable voltage references.

Programmable voltage reference

Subject matter disclosed herein may relate to programmable current for correlated electron switches.

Programmable current for correlated electron switch

Disclosed are methods, systems and devices for operation of dual non-volatile memory devices. In one aspect, a pair of non-volatile memory device coupled in series may be placed in complementary memory states any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device.

Method, system and device for complementary non-volatile memory device operation

A monitoring circuit for a CES element is provided. The circuit includes a control circuit and an output circuit. The control circuit is configured to vary a control signal provided to the CES element. The control signal may be varied for determining an impedance state of the CES element. The output circuit provided an output signal in dependence on the determined impedance state of the CES element.

Circuit and method for monitoring correlated electron switches

Disclosed are methods, systems and devices for operation of dual non-volatile memory devices. In one aspect, a pair of non-volatile memory device coupled in series may be placed in complementary memory states any one of multiple memory states in write cycles by controlling a current and a voltage applied to terminals of the non-volatile memory device.

Disclosed are a circuit and method for implementing a switching function. In an embodiment, the circuit includes a first logic circuit, a second logic circuit, and a Correlated electron switch (CES) element. The CES element is configurable to have a non-volatile state to enable or disable an electrical connection between the first logic circuit and the second logic circuit.

Correlated electron switch device

Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. A plurality of bitcells may be connectable to a common source voltage during a two-phase operation to place individual bitcells in intended impedance states.

Method, system and device for non-volatile memory device operation

Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a non-volatile memory device may be placed in any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. For example, a write operation may apply a programming signal across terminals of non-volatile memory device having a particular current and a particular voltage for placing the non-volatile memory device in a particular memory state.

Broadly speaking, embodiments of the present techniques provide an amplification circuit comprising a sense amplifier and at least one Correlated Electron Switch (CES) configured to provide a signal to the sense amplifier. The sense amplifier outputs an amplified version of the input signal depending on the signal provided by the CES element. The signal provided by the CES element depends on the state of the CES material. The CES element provides a stable impedance to the sense amplifier, which may improve the reliability of reading data from the bit line, and reduce the number of errors introduced during the reading.

Sense amplifier

An apparatus including a Correlated Electron Switch (CES) element and a programing circuit is provided. The programing circuit provides a programing signal to the CES element to program the CES element to an impedance state of multiple impedance states when a number of times the CES element has been programed is less than a threshold.

One-time and multi-time programming using a correlated electron switch

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San Jose, CA, United States of America

Robert Campbell Aitken