Applied Materials, Inc.

Robert C McIntosh

Abhilash J Mayur

Joseph Yudovsky

Khaled Ahmed

Christopher Sean Olsen

Alexander N Lerner

Majeed Foad

Yi Ma

Mark Yam

Haifan Liang

Blake R Koelmel

Shulin Wang

Gary Eugene Miner

Kevin Laughton Cunningham

Toi Yue Becky Leung

David D L Larmagnac

Jianqi Wang

Joung Woo Lee

Gia Pham

Alex Gerrard

Implementations described herein generally relate to substrate processing equipment and more particularly to methods and compositions for temperature control of substrate processing equipment. In one implementation, a method of cooling a processing chamber component is provided. The method comprises introducing an inert purge gas into a supply reservoir containing a coolant and flowing the treated coolant to a processing chamber component to cool the processing chamber component. The coolant initially comprises deionized water and a water-soluble base.

Coolant and a method to control the pH and resistivity of coolant used in a heat exchanger

A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy toward a surface of the substrate. An energy blocker is provided to block at least a portion of the energy directed toward the substrate. The blocker prevents damage to the substrate from thermal stresses as the incident energy approaches an edge of the substrate.

Millisecond annealing (DSA) edge protection

Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1&#xd7;10atoms/cmto about 1&#xd7;10atoms/cm, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800&#xb0; C. or higher, such as about 1,000&#xb0; C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000&#xb0; C. or greater, such within a range from about 1,050&#xb0; C. to about 1,400&#xb0; C., for about 500 milliseconds or less, such as about 100 milliseconds or less.

Gate electrode dopant activation method for semiconductor manufacturing

In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.

Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal

Growing community of inventors

San Jose, CA, United States of America

Robert C McIntosh