Texas Instruments Corporation

Other

Robert C Hooper

Douglas P Verret

Bobby A Roane

Clyde R Fuller

Franz R Brotzen

Prabhakar Bhimrao Ghate

Alexander J Harrover

Charles E Terry

Neal Jay Tolar

Michael J VanHoy

A non-toxic shotgun pellet having ballistic characteristics similar to those of lead shot is made up of particles of a first alloy, containing primarily ferrotungsten, suspended in a matrix of a second alloy, containing primarily lead. The relative amounts of lead and ferrotungsten are selected to minimize cost while keeping the overall lead content to forty percent or less, by weight, to avoid toxicity. The first alloy is formed by diluting the ferrotungsten with iron or steel and carbon at temperatures on the order of 1800.degree. C. in an inert gas environment. The alloy is quenched and then crushed into particles over which is poured the second alloy comprising lead, tin and antimony in order to suspend the first alloy particles in the second alloy mixture.

Non-toxic shot pellets for shotguns and method

Metal contacts and interconnections for integrated circuits utilize copper as the primary conductor, with the copper being totally encased in refractory metal layers on both top and bottom surfaces and also sidewalls. The contact hole in silicon oxide may be filled with a plug of refractory metal before the copper is deposited, or the first refractory metal layer may be conformally deposited to coat the sidewalls of the hole.

Metal contacts and interconnections for VLSI devices

Method of making metal contacts and interconnections for VLSI devices

A method of plating an interconnect or contact metal of higher conductivity than aluminum onto a metal layer in VLSI devices includes depositing a coating of insulator over the metal layer, patterning and etching the insulator coating into a mask of the reverse image of a desired lead pattern and then depositing the interconnect metal onto the exposed metal layer. Following depositing the insulator mask and underlaying metal is selectively removed.

Method of plating an interconnect metal onto a metal in VLSI devices

Elevated metal contact bumps are provided on a microelectronic semiconductor circuit, with the use of aluminum-palladium metallization as a base for selective electroless plating. The aluminum and palladium are preferably deposited sequentially in a single operation, i.e., without exposing the aluminum surface to the atmosphere. The aluminum-palladium film is then patterned in a single step, using an etchant which attacks both metals at substantially the same rate. The metal pattern is then covered with an insulation layer wherein apertures are opened to expose palladium at selected sites for immersion in an electroless plating bath of ionic Cu or Ni for bump formation.

Low cost method for forming elevated metal bumps on integrated circuit

A process has been developed for fabricating a nonpolar low loss thin film capacitor utilizing tantalum oxide for high capacitance per unit area as a dielectric which is deposited in film form relative to a suitable substrate. A counter electrode is deposited on a substrate. A film of metal having a high recrystallization temperature is deposited on the counter electrode. This deposition forms the bottom electrode of the capacitor structure. The metal film has a quality thermal expansion resistance and a high reliability in thermal environments.

Growing community of inventors

Houston, TX, United States of America

Robert C Hooper