General Instrument Corporation

Other

Robert C Heller

Dennis Garbis

Lawrence R Hill

Amedeo J Granata

Joseph Y Chan

Lawrence B Hill

An apparatus for producing high intensity laser radiation. A vacuum enclosure is provided which includes first and second magnets at each end, and a magnetic field applied along the length of the enclosure. The magnets and applied magnetic field forms a magnetic mirror for electrons of a near relativistic energies introduced into the vacuum enclosure. A thin dielectric material is provides which is charged on each side by some of the electrons which strike the surfaces of the dielectric. The charged dielectric provides high intensity electrostatic fields at the edges thereof. The strength of the magnets and applied magnetic field are selected to produce an oscillation of electrons which pass through the high intensity electrostatic fields and are subject to a radial acceleration which produces free electron lasing. The laser energy is collected by an optical cavity within the enclosure. The laser energy exits an optical port within the enclosure.

High power free electron lasing device using electrostatic wigglers with

A reactor for use in a chemical vapor deposition process occurring in a radiant absorption heater system employs a vertical gas flow reaction vessel and a novel substantially solid susceptor configured as a truncated wedge. The susceptor is characterized by a high utilized area, resulting in a high wafer capacity and low power requirement.

Reactor and susceptor for chemical vapor deposition process

A susceptor for use in a chemical vapor deposition process in a radiant absorption heating system comprises a heater adapted to absorb radiant energy and a sheath of high purity quartz completely surrounding the heater. The sheath further comprises dimples inside the sheath spacing the sheath from the heater. The heater may be graphite having a substantially pinhole-free outgas-inhibiting outer-coating such as silicon carbide.

Susceptor for radiant absorption heater system

A method of cooling induction-heated vapor deposition apparatus including an electrically grounded deposition enclosure and a RF induction heating coil having essentially electrically uninsulated turns thereof disposed about the deposition enclosure, comprises the step of spraying deionized liquid having a resistivity of at least 14 megohms-om directly onto the apparatus.

Method of cooling induction-heated vapor deposition apparatus and

The reactor includes an R.F. induction coil, connected to a power supply, and located in proximity to the deposition enclosure. The coil radiates energy, a portion of which is converted by a susceptor situated in the enclosure into heat which is applied to the surface of the wafer adjacent thereto. A concave metallic infrared reflector redirects some of the normally unused radiated energy, in the form of radiant heat, onto the external surface of the wafer to promote even heating and, thus, reduce temperature gradients in the wafer thereby eliminating detrimental dislocation motion or slip. Moreover, the input power requirements of the system are reduced. Preferably, the enclosure is cooled by spraying de-ionized liquid thereon to eliminate unwanted deposition of dopants on the interior surface thereof.

Chemical vapor deposition reactor with infrared reflector

Polycrystalline silicon is obtained by providing a silicon wafer having disposed over at least one face thereof a base coating of oxide, nitride or oxynitride composition, forming a substantially pinhole-free and scratch-free layer of carbon on said base coating over at least the face, forming on the face of the carbon layer a layer of polycrystalline silicon, and removing the silicon layer from the protective coating. Any of the carbon layer adhering to the silicon layer is easily removable to provide the silicon layer separate from the substrate. The wafer/coating unit is reusable in the procedure. The wafer/coating/carbon layer unit comprises a workpiece useful in the practice of the invention.

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Stony Brook, NY, United States of America

Robert C Heller