Lam Research Corporation

Robert C Hefty

Kenji Takeshita

Enrico Magni

Gerardo Delgadino

Stephen M Sirard

Michael Kelly

Michelle Lupan

Andrew D Bailey, Iii

Eric A Hudson

Eric H Lenz

Chung-Ho Huang

James V Tietz

William S Kennedy

Dean Jay Larson

Bing Ji

James R Bowers

Bi-Ming Yen

William M Denty, Jr

Siyi Li

Wan-Lin Chen

Andrew Lui

Mark Todhunter Robson

Daniel Le

Maryam Moravej

Tsuyoshi Aso

Yu Cheng

Charles Potter

Mayumi Block

Seiji Kawaguchi

Jungmin Ko

Dave Humbird

Audrey Charles

Thomas McClard

Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing operations. Gas supply systems are also disclosed.

Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber

A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched in the plasma processing chamber, comprising; flowing a silicon nitride etch gas; forming the silicon nitride etch gas into a plasma to etch the silicon nitride layer, and stopping the flow of the silicon nitride etch gas. The silicon layer is, comprising flowing a silicon etch gas, wherein the silicon etch gas comprises SFor SiF, forming the silicon etch gas into a, and stopping the flow of the silicon etch gas. The silicon oxide layer is etched in the plasma processing chamber, comprising flowing a silicon oxide etch gas, forming the silicon oxide etch gas into a plasma, and stopping the flow of the silicon oxide etch gas.

Silicon on insulator etch

A method for controlling critical dimension (CD) of etch features in an etch layer disposed below a functionalized organic mask layer disposed below an intermediate mask layer, disposed below a patterned photoresist mask, which forms a stack is provided. The intermediate mask layer is opened by selectively etching the intermediate mask layer with respect to the patterned photoresist mask. The functionalized organic mask layer is opened. The functionalized organic mask layer opening comprises flowing an open gas comprising COS, forming a plasma, and stopping the flowing of the open gas. The etch layer is etched.

Bi-layer, tri-layer mask CD control

A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.

Method for low-K dielectric etch with reduced damage

A method of removing carbon doped silicon oxide between metal contacts is provided. A layer of the carbon doped silicon oxide is converted to a layer of silicon oxide by removing the carbon dopant. The converted layer of silicon oxide is selectively wet etched with respect to the carbon doped silicon oxide and the metal contacts, which forms recess between the metal contacts.

Method for dielectric material removal between conductive lines

A computer-implemented method for performing recipe evaluation is provided. The computer-implemented method includes integrating a plurality of data sources into a single recipe report card framework. The recipe report card framework includes an editor for interacting with the plurality of data sources. The computer-implemented method also includes displaying a plurality of graphical displays. Each graphical display of the plurality of graphical displays is configured to present a signal parameter of a set of signal parameters for at least a substrate. The computer-implemented method further includes providing a plurality of criteria for each of the set of signal parameters. The computer-implemented method yet also includes providing a plurality of ranges for the each of the set of signal parameters. The computer-implemented method yet further includes providing an expert guide, which is configured to provide guidance in analyzing a recipe.

Recipe report card framework and methods thereof

Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma using a gas composition containing a fluorine-containing gas, and removing the black silicon or black silicon carbide from the surface with the plasma. The methods can also remove black silicon or black silicon carbide from surfaces of the components in the chamber in addition to the upper electrode.

Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses

Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.

Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing

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Fremont, CA, United States of America

Robert C Hefty