Metalenz, Inc.

Harvard College

The Charles Stark Draper Laboratory, Inc.

University of Pennsylvania

Drexel University

Robert C Devlin

John W Graff

Pawel Latawiec

Federico Capasso

Gilbert N Riley, Jr

Mohammadreza Khorasaninejad

Adam Erlich

Hongkun Park

Alexander Arthur High

Harris Miller

Wei-Ting Chen

Alexander Yutong Zhu

Anne Janet Milliez

Jaewon Oh

Hao Zhou

Dalia P Ornelas Huerta

Seyedali Forouzmand

Mikhail D Lukin

Jonathan Eli Spanier

Andrew Marshall Rappe

Soonwon Choi

Noah A Rubin

Yao-Wei Huang

Alexander S Zibrov

David Patterson

Charles Roques-Carmes

Mitra Lenore Taheri

Vladimir Manucharyan

Antonio Ambrosio

Shimon Jacob Kolkowitz

Muhammad Aun Abbas Zaidi

Arthur Safira

Quirin P Unterreithmeier

Steven May

James Rondinelli

Ishan Mishra

Alexander A High

Vladimir E Manucharyan

Metasurface elements, integrated systems incorporating such metasurface elements with light sources and/or detectors, and methods of the manufacture and operation of such optical arrangements and integrated systems are provided. Systems and methods for integrating transmissive metasurfaces with other semiconductor devices or additional metasurface elements, and more particularly to the integration of such metasurfaces with substrates, illumination sources and sensors are also provided. The metasurface elements provided may be used to shape output light from an illumination source or collect light reflected from a scene to form two unique patterns using the polarization of light. In such embodiments, shaped-emission and collection may be combined into a single co-designed probing and sensing optical system.

Transmissive metasurface lens integration

Hybrid imaging systems incorporating conventional optical elements and metasurface elements with light sources and/or detectors, and methods of the manufacture and operation of such optical arrangements are provided. Systems and methods describe the integration of apertures with metasurface elements and refractive optics with metasurface elements in illumination sources and sensors.

Aperture-metasurface and hybrid refractive-metasurface imaging systems

An optical device comprises a metasurface including a plurality of nanostructures. The nanostructures convert an input light of an arbitrary spin state into an output light of an arbitrary total angular momentum state characterized by a superposition of two independent orbital angular momentum (OAM) states.

Spin-to-orbital angular momentum converter for light

Disclosed herein are systems and methods including polarization sorting metasurface microlens array devices. In certain embodiments, a polarization imaging device is provided. The polarization imaging device includes: a source of image light; a metasurface lenslet array comprising a plurality of repeating metasurface lenslets, where the plurality of repeating metasurface lenslets comprise a plurality of first metasurface lenslets configured to diffract the image light into a first polarization light in a first direction and a second polarization light in a second direction; an image sensor positioned in the optical path of the first polarization light and the second polarization light, and where the image sensor includes a plurality of image sensing units including a first image sensing unit positioned to sense the first polarization light and a second image sensing unit positioned to sense the second polarization light.

Polarization sorting metasurface microlens array device

A method of fabricating a visible spectrum optical component includes: providing a substrate; forming a resist layer over a surface of the substrate; patterning the resist layer to form a patterned resist layer defining openings exposing portions of the surface of the substrate; performing deposition to form a dielectric film over the patterned resist layer and over the exposed portions of the surface of the substrate, wherein a top surface of the dielectric film is above a top surface of the patterned resist layer; removing a top portion of the dielectric film to expose the top surface of the patterned resist layer and top surfaces of dielectric units within the openings of the patterned resist layer; and removing the patterned resist layer to retain the dielectric units over the substrate.

Atomic layer deposition process for fabricating dielectric metasurfaces for wavelengths in the visible spectrum

An optical device includes: (1) a substrate; and (2) multiple meta-lenses disposed on the substrate, each meta-lens of the meta-lenses including multiple nanofins disposed on a respective region of the substrate, the nanofins together specifying a phase profile of the meta-lens.

Ultra-compact, aberration corrected, visible chiral spectrometer with meta-lenses

A meta-lens having a phase profile includes a substrate and a plurality of nanostructures disposed on the substrate. Each individual nanostructure of the nanostructures imparts a light phase shift that varies depending on a location of the individual nanostructure on the substrate. The light phase shifts of the nanostructures define the phase profile of the meta-lens. The varying light phase shifts can be realized by, e.g., changing orientations of nanofins or changing diameters of nanopillars.

Meta-lenses for sub-wavelength resolution imaging

A method of making measurements includes providing a sensor with at least one solid state electronic spin; irradiating the sensor with radiation from an electromagnetic radiation source that manipulates the solid state electronic spins to produce spin-dependent fluorescence, wherein the spin-dependent fluorescence decays as a function of relaxation time; providing a target material in the proximity of the sensor, wherein, thermally induced currents (Johnson noise) present in the target material alters the fluorescence decay of the solid state electronic spins as a function of relaxation time; and determining a difference in the solid state spins spin-dependent fluorescence decay in the presence and absence of the target material and correlating the difference with a property of the sensor and/or target material.

Sensor for measurements using Johnson noise in materials

A vertical charge ordered transistor is disclosed. A thin charge ordered layer is employed as a tunnel barrier between two electrodes. A gate-induced accumulation of charge destabilizes the charge ordered state around the circumference of the device, opening up a parallel ohmic conduction channel, which leads to an exponential increase in source-drain current. VCOT devices have the potential to exhibit very large on/off ratios, low off-state currents, and sub-threshold slopes below 60 mV/dec.

Charge ordered vertical transistors

Growing community of inventors

Cambridge, MA, United States of America

Robert C Devlin