Micron Technology Incorporated

Other

Robert C Carr

Graham Richard Wolstenholme

Paul J Rudeck

Anton J deVillers

Farrell Martin Good

Zishu Zhang

David A Cathey

Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material.

Methods of forming patterned masks

The invention includes a memory device supported by a semiconductor substrate and comprising in ascending order from the substrate: a floating gate, a dielectric material, a layer consisting essentially of tungsten nitride, a first mass consisting essentially of tungsten, and a second mass consisting essentially of one or more nitride compounds. The invention includes a memory device having a floating gate and a dielectric material over the floating gate. The device has a mass consisting essentially of tungsten over the dielectric material, with the mass having a pair of opposing sidewalls. A pair of sidewall spacers are along the opposing sidewalls of the mass. The sidewall spacers comprise a first layer consisting essentially of one or more nitride compounds and a second layer different from the first layer. The invention includes methods of making memory devices.

Programmable memory devices supported by semiconductor substrates

Programmable memory devices supported by semiconductive substrates

The invention includes a method of making a programmable memory device. At least one floating gate layer is formed over a semiconductor substrate. A dielectric material is formed over the at least one floating gate layer, and a mass consisting essentially of W is formed over the dielectric material. The mass has a pair of opposing sidewalls. A first layer is formed over the mass and along the sidewalls of the mass, and a second layer is formed over the first layer. The second layer extends over the mass and along the sidewalls of the mass, and has a different composition than the first layer. After the second layer is formed, the first and second layers are anisotropically etched to form sidewall spacers extending along the sidewalls of the mass.

Methods of forming programmable memory devices comprising tungsten

A personal hygiene system includes a cabinet, a cover hingedly attached to said cabinet, a fluid bottle removably attachable to the cabinet, a hose attached to the fluid bottle, and at least one personal hygiene accessory attached to said hose. A plurality of flexible tabs are formed on the back side of the interior of the cabinet for releasably holding the fluid bottle. Optionally, a quick-connector release may be used to connect the hose and the fluid bottle. A plurality of tabs are provided in an array about the fluid bottle for releasably receiving the tube. One or more holders are preferably formed on the back wall of the cabinet for releasably receiving a personal hygiene accessory.

Discrete personal hygiene system

A method to anisotropically etch an oxide/poly/oxide or an oxide/poly/oxide sandwich structure on a silicon wafer substrate in situ, that is, using a single parallel plate plasma reactor chamber and a single inert cathode, with a variable gap between cathode and anode. This method has an oxide etch step and a silicide/poly etch step. In the poly removal step, helium is added to improve etch uniformity. The pressure, power, and various gas quantities are balanced to produce the fastest etch rates while preserving selectivity. The fully etched sandwich structure has a vertical profile at or near 90.degree. from horizontal.

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Boise, ID, United States of America

Robert C Carr