Lucent Technologies Inc.

Agere Systems Inc.

Agere Systems Optoelectronics Guardian Corp.

At&t Bell Laboratories

American Telephone & Telegraph Co., At&t Bell Laboratories

Robert Bruce Van Dover

Sungho Jin

Wei Zhu

Lynn Frances Schneemeyer

Robert J Cava

Bertram Josef Batlogg

Richard C Sherwood

Robert McLemore Fleming

Thomas H Tiefel

Glenn B Alers

Arman Gasparyan

Li-Han Chen

Julia Mae Phillips

Herbert R Shea

Timothy J Klemmer

Kenneth Alexander Ellis

Yuri Suzuki

Glen B Alers

Vladislav Korenivski

Ashraf W Lotfi

Zhengxiang Ma

Timothy John Klemmer

Paul Anthony Polakos

John Thomson, Jr

David Wilfred Johnson

Debra Anne Fleming

Ernst M Gyorgy

Gideon Grader

Paul Matthew Mankiewich

Thomas Henry Tiefel, Deceased

Ernst Michael Gyorgy, Deceased

Suzanne Rachel Gyorgy

Joseph Michael Nemchik

A class of superconductive materials containing copper-oxygen bonding and with mixed cation-occupancy designed with a view to size and valence consideration yield useful values of critical temperature and other properties. Uses entail all applications which involves superconducting materials such as magnets and transmission lines which require continuous superconductivity paths as well as detectors (e.g., which may rely on tunneling).

Method of making cuprate superconducting material

The present invention provides a micro-electro-mechanical system (MEMS) device, a method of manufacture therefore, and an optical communications system including the same. The device includes an electrode located over a substrate and a charge dissipation layer located proximate and electrically coupled to the substrate. The device may further include a moveable element located over the electrode.

Electro-mechanical device having a charge dissipation layer and a method of manufacture therefor

A ferrite layer formation process that may be performed at a lower temperature than conventional ferrite formation processes. The formation process may produce highly anisotropic structures. A ferrite layer is deposited on a substrate while the substrate is exposed to a magnetic field. An intermediate layer may be positioned between the substrate and the ferrite to promote bonding of the ferrite to the substrate. The process may be performed at temperatures less than 300&deg; C. Ferrite film anisotropy may be achieved by embodiments of the invention in the range of about 1000 dyn-cm/cm to about 2&times;10 dyn-cm/cm .

Ferrite film formation method

Devices and systems based on novel superconducting material

Superconducting copper oxides of the perovskite structure are modified to have mixed occupancy of a cation site, thereby resulting in increased limits in critical field and/or critical current. Mixed occupancy may be observed in terms of increased resistivity as the superconducting material reverts to a nonsuperconducting state. A significant advantage, at least for preferred compositions, derives from the fact that critical temperature is unaffected relative to the prototypical material.

The specification describes silicon MOS devices with gate dielectrics having the composition Ta Al O , where x is 0.03-0.7 and y is 1.5-3, Ta Si O , where x is 0.05-0.15, and y is 1.5-3, and Ta Al Si O , where 0.7>x&plus;z>0.05, z<0.15 and y is 1.5-3. By comparison with the standard SiO gate dielectric material, these materials provide improved dielectric properties and also remain essentially amorphous to high temperatures. This retards formation of SiO interfacial layers which otherwise dominate the gate dielectric properties and reduce the overall effectiveness of using a high dielectric material.

MOS transistors with improved gate dielectrics

The present invention is a planar spiral inductor a top magnetic layer a bottom magnetic layer; and a plurality of conductive coils disposed between said top magnetic layer and said bottom magnetic layer. A significant difference from prior art is that the top and bottom magnetic layers have their centers effectively cut out using lithographic techniques or other techniques to frame the core of the conductive spirals. An advantage of this structure over the prior art is that when magnetic anisotropies other than shape are kept small, then the magnetic configuration will produce a magnetostatic shape anisotropy such that the easy axis (low energy direction of magnetization) lies parallel to the legs of a rectangular frame or the circumference of a circular frame, as will be described. During operation of the inductor, the field produced by the coils flows in a radial direction and will be perpendicular to the easy axis direction thereby causing magnetization reversal to occur by rotation while advantageously utilizing the full structure in this mode.

Planar magnetic frame inductors having open cores

The invention relates to dielectric materials comprising films of R&mdash;Ge&mdash;Ti&mdash;O where R is selected from Zr and Hf, and to methods of making the same. The dielectric material preferably has the formula R &mdash;Ge &mdash;Ti &mdash;O where 0.05&gE;x&lE;1, 0.05&gE;y&lE;1, 0.1&gE;z&lE;1, and 1&gE;w&lE;2, and x&plus;y&plus;z&cong;1, and more preferably, where 0.15&gE;x&lE;0.7, 0.05&gE;y&lE;0.3, 0.25&gE;z&lE;0.7, and 1.95&gE;w&lE;2.05, and x&plus;y&plus;z&cong;1. The invention is particularly useful in silicon-chip integrated circuit devices including a capacitor of a dynamic random access memory (DRAM) device.

Article comprising a dielectric material of ZR-Ge-Ti-O or Hf-Ge-Ti-O and method of making the same

In accordance with the invention, magnetostrictive saw devices are provided with improved transducer structures for enhanced performance. In one improved device, the transducers are in the form of gratings with interconnected ends for reduced resistance and inductance. In another embodiment, the transducers are shaped to provide apodization. In yet a third embodiment, transducer performance is enhanced by patterning composite structures.

Magnetostrictive surface acoustic wave devices having optimized transducers

Some mechanical, electrical, and thermal properties of high T,superconductors such as (Ba, Y) cuprates can be substantially improved by the dispersal of an appropriate metal in the superconductive body. For instance, mixing Ag particles with superconductive powder of nominal composition Ba,YCu,O,and processing the mixture in the conventional manner can produce superconductive bodies having T,of about 93 K and substantially greater fracture strength and normal state electrical and thermal conductivity than otherwise identical bodies that do not contain Ag particles.

Method of making a superconductive oxide body

The specification describes silicon MOS devices with gate dielectrics having the composition Ta.sub.1-x Al.sub.x O.sub.y, where x is 0.03-0.7 and y is 1.5-3, Ta.sub.1-x Si.sub.x O.sub.y, where x is 0.05-0.15, and y is 1.5-3, and Ta.sub.1-x-z Al.sub.x Si.sub.z O.sub.y, where 0.7&gt;x+z&gt;0.05, z&lt;0.15 and y is 1.5-3. By comparison with the standard SiO.sub.2 gate dielectric material, these materials provide improved dielectric properties and also remain essentially amorphous to high temperatures. This retards formation of SiO.sub.2 interfacial layers which otherwise dominate the gate dielectric properties and reduce the overall effectiveness of using a high dielectric material.

An improved surface acoustic wave device includes a film of a magnetostrictive material disposed on a substrate and spaced apart input and output transducer elements disposed on the film. The input element causes horizontally polarized shear waves to propagate along the film via the magnetostriction of the film. The shear waves propagating along the film are received by the output transducer element. The SAW device can be integrated on a microelectronic circuit useable in single chip radio frequency applications.

Magnetostrictive surface acoustic wave device and microelectronic

The invention is embodied in an anisotropic, soft magnetic thin film article comprising a cobalt-iron-chromium-nitrogen (Co--Fe--Cr--N) alloy. The thin film is formed such that the alloy has a relatively high saturation magnetization (4.pi.M.sub.s), e.g., greater than approximately 8 kilogauss (kG), a relatively low coercivity (H.sub.c), e.g., less than approximately 2.0 oersteds (Oe), a relatively high squareness ratio (M.sub.r /M.sub.s), e.g., greater than approximately 0.90, and a relatively high anisotropy field (H.sub.k), e.g., greater than approximately 20 Oe, in an as-deposited condition or, alternatively, with a relatively low temperature treatment, e.g., below approximately 300.degree. Celsius. The inventive films are suitable for use in electromagnetic devices, e.g., in microtransformer cores, inductor cores and in magnetic read-write heads.

Article comprising anisotropic Co-Fe-Cr-N soft magnetic thin films

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Maplewood, NJ, United States of America

Robert Bruce Van Dover