Applied Materials, Inc.

Varian Semiconductor Equipment Associates, Inc.

Robert Brent Vopat

Jason M Schaller

William Tyler Weaver

Charles T Carlson

David T Blahnik

Jeffrey Charles Blahnik

Malcolm N Daniel, Jr

Benjamin B Riordon

Paul E Pergande

Frank Sinclair

Joseph Yudovsky

Morgan Evans

Paul J Murphy

Aaron Webb

Michael Honan

Robert J Mitchell

Jacob Newman

Andrew J Constant

Ala Moradian

Tuan Anh Nguyen

Jeffrey C Hudgens

Costel Biloiu

James D Strassner

D Jeffrey Lischer

Marvin L Freeman

Gregory John Freeman

Dinesh Kanawade

Michael Rohrer

Stephen Hickerson

Krag R Senior

Kallol Bera

Julian G Blake

Timothy Joseph Franklin

Jean Delmas

Kevin R Anglin

Kim Ramkumar Vellore

Luke W Bonecutter

Paul Forderhase

James R McLane

Jaime A Carrera

Embodiments herein are directed to a linear accelerator assembly for an ion implanter. In some embodiments, a LINAC may include a coil resonator and a plurality of drift tubes coupled to the coil resonator by a set of flexible leads.

Linear accelerator assembly including flexible high-voltage connection

Apparatus and methods to process one or more wafers are described. The apparatus comprises a chamber defining an upper interior region and a lower interior region. A heater assembly is on the bottom of the chamber body in the lower interior region and defines a process region. A wafer cassette assembly is inside the heater assembly and a motor is configured to move the wafer cassette assembly from the lower process region inside the heater assembly to the upper interior region.

Processing chamber with annealing mini-environment

An apparatus may include a resonator chamber, arranged in a vacuum enclosure; an RF electrode assembly, arranged within the vacuum enclosure; and a resonator coil, disposed within the resonator chamber, the resonator coil having a high voltage end, directly connected to at least one RF electrode of the RF electrode assembly.

Resonator, linear accelerator, and ion implanter having dielectric-free resonator chamber

Embodiments herein are directed to a linear accelerator assembly for an ion implanter, wherein the linear accelerator includes a jacketed resonator coil. In some embodiments, a linear accelerator assembly may include a first fluid conduit and a coil resonator coupled to the first fluid conduit, wherein the coil resonator is operable to receive a first fluid via the first fluid conduit, wherein the coil resonator comprises a first coil conduit adjacent a second coil conduit, and wherein a first fluid channel defined by the first coil conduit is operable to receive the first fluid.

Linear accelerator coil including multiple fluid channels

Embodiments herein are directed to a resonator for an ion implanter. In some embodiments, a resonator may include a housing, and a first coil and a second coil partially disposed within the housing. Each of the first and second coils may include a first end including an opening for receiving an ion beam, and a central section extending helically about a central axis, wherein the central axis is parallel to a beamline of the ion beam, and wherein an inner side of the central section has a flattened surface.

Resonator coil having an asymmetrical profile

Wafer cassettes and methods of use that provide heating a cooling to a plurality of wafers to decrease time between wafer switching in a processing chamber. Wafers are supported on a wafer lift which can move all wafers together or on independent lift pins which can move individual wafers for heating and cooling.

Batch heating and cooling chamber or loadlock

Buffer chamber including robots, a carousel and at least one heating module for use with a batch processing chamber are described. Robot configurations for rapid and repeatable movement of wafers into and out of the buffer chamber and cluster tools incorporating the buffer chambers and robots are described.

Buffer chamber wafer heating mechanism and supporting robots

A method and apparatus for of improving processing results in a processing chamber by orienting a substrate support relative to a surface within the processing chamber. The method comprising orienting a supporting surface of a substrate support in a first orientation relative to an output surface of a showerhead, where the first orientation of the supporting surface relative to the output surface is not coplanar, and depositing a first layer of material on a substrate disposed on the supporting surface that is oriented in the first orientation.

Dynamic leveling process heater lift

Apparatuses for annealing semiconductor substrates, such as a batch processing chamber, are provided herein. The batch processing chamber includes a chamber body enclosing an internal volume, a cassette moveably disposed within the internal volume and a plug coupled to a bottom wall of the cassette. The chamber body has a hole through a bottom wall of the chamber body and is interfaced with one or more heaters operable to maintain the chamber body at a temperature of greater than 290&#xb0; C. The cassette is configured to be raised to load a plurality of substrates thereon and lowered to seal the internal volume. The plug is configured to move up and down within the internal volume. The plug includes a downward-facing seal configured to engage with a top surface of the bottom wall of the chamber body and close the hole through the bottom wall of the chamber body.

High pressure steam anneal processing apparatus

Provided herein are approaches for processing reticle blanks. In one approach, a reticle processing system includes a support assembly having a plate coupled to a frame, and a carrier assembly coupled to the support assembly. In one approach, the carrier assembly includes a carrier base coupled to the plate, a reticle disposed over the carrier base, and a carrier shield disposed over the reticle, wherein the carrier shield may include a central opening formed therein, allowing for placement and extraction of the reticle. In one approach, when the carrier assembly is placed atop the support assembly, a plurality of pins extend from the plate through corresponding openings in the carrier base, the plurality of pins supporting the carrier assembly so the carrier base, the reticle, and the carrier shield are each independently supported and vertically separated from one another.

Reticle processing system

A system for annealing substrates is provided. The system includes a first boiler having an input coupled to a water source; a second boiler having an input connected to an output of the first boiler; and a batch processing chamber coupled to the output of the second boiler, wherein the batch processing chamber is configured to anneal a plurality of substrates using steam from the second boiler.

Annealing system and method

Growing community of inventors

Austin, TX, United States of America

Robert Brent Vopat