Thomson-Csf

Robert Blondeau

Daniel Rondi

Manijeh Razeghi

Michel Krakowski

Martin Defour

Franck Omnes

Genevieve Glastre

Michel Papuchon

Baudouin De Cremoux

Gerard Doriath

Philippe Maurel

Jean-Charles Renaud

Alain Bensoussan

Daniel Rondt

Francoise Lozes

Yannick Bourbin

Michel Krakowsky

Beaudoin De Cremoux

Anne Taineau

Yannic Bourdin

Gervaise Vilain

A method for making an optical amplifier according to which a stack of the following layers is made by epitaxy: a first optical guiding layer; a first chemical attack barrier layer; a second optical guiding layer; a second chemical attack barrier layer; an active layer; a confinement layer; and a contact layer. Then at least one amplifier element followed by an optical guide located beneath this amplifier element are etched in these layers. The method can be applied to the making of optoelectronic devices such as modulators, change-over switches, distributors, etc.

Method for making an optoelectronic amplifier device, and applications

An opto-electronic device which monolithically integrates a laser emitter and an optical detector positioned in-line on a single waveguide, in which the laser emitter and detector operate at different wavelengths. Such an opto-electronic device may find particular application in various transmission or telecommunication systems.

Optical semiconductor transceiver with chemically resistant layers

Disclosed is an optoelectronic device on a semi-insulator substrate, of the type comprising, stacked on one another, at least:

Optoelectric device on semi-insulator substrate and methods for making

Optoelectronic device on semi-insulator substrate and methods for making

The method consists of the following successive steps: the deposition on a substrate, by epitaxy, of an optical confinement layer, formed by a first semiconducting material; the deposition, by epitaxy of an active layer, formed by a second semiconducting material; the deposition, by epitaxy, of a stop layer, formed by a third semiconducting material, with a thickness of between 0.005 and 0.02 microns; the deposition, by epitaxy, of a guide layer, formed by a fourth semiconducting material, with a thickness of between 0.01 and 0.03 microns; the deposition of a layer of photosensitive resin, and the cutting out of this layer in a shape to be given to the diffraction lattice which is to be made; the attacking of the guide layer by means of a selective, chemical agent which attacks neither the material of the stop layer nor the resin, this chemical agent being allowed to act until the entire thickness of the guide layer has been gone through, said thickness being chosen to be equal to the depth required for the diffraction lattice.

Method for making a diffraction lattice on a semiconductor material

Device of semiconductor materials formed on a substrate having a

The invention concerns an optical guiding structure comprising, between two optical confinement layers, an optical guiding layer and an optical guiding element separated from each other by a layer for stopping chemical attack, to obtain by epitaxy methods and by chemical attack, a guiding element of which it is possible to precisely calibrate the thickness obtain surfaces of excellent quality and perform cutting out with sharpness, the invention being applicable to producing lasers and optical phase modulators.

Optical waveguide made solid state material laser applying this waveguide

Disclosed is an optoelectronic device implanted on a silicon substrate and comprising, in particular, on this substrate, a set of matching layers on which there is made a first confinement layer based on indium phosphide, an active layer based on Ga.sub.x In.sub.1-x As.sub.1-y and a second active layer of indium phosphide.

Group III-V compound based optoelectronic device on silicon substrate

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Ablis, France

Robert Blondeau