Motorola Corporation

Motorola Mobility LLC

Motorla, Inc.

Robert B Lempkowski

Keryn Lian

Tomasz L Klosowiak

Manes Eliacin

Aroon V Tungare

Lih-Tyng Hwang

Jovica Savic

Junhua Liu

Gregory Joseph Dunn

Li Li

Sanjar Ghaem

Marc Kenneth Chason

Ke Keryn Lian

Huinan J Yu

Lawrence E Lach

Robert T Croswell

Barbara Foley Barenburg

Zhengfang Qian

W J Kitchen

A mobile computing device and corresponding method are disclosed. The mobile computing device includes an RF MEMS switch circuit including at least one normally open RF MEMS switch and a normally closed RF MEMS switch and a controller connected to the RF MEMS switch circuit. The RF MEMS switch circuit applies a default condition to the mobile computing device through the normally closed RF MEMS switch, and the controller causes application of control signals to one of the at least one normally open RF MEMS switches and to the normally closed RF MEMS switch to apply an alternate condition to the mobile computing device instead of the default condition.

Normally open and normally closed RF MEMS switches in a mobile computing device and corresponding method

An embedded assembly () and method for fabricating the same is provided. The embedded assembly includes an organic substrate () and at least one movable element (). The embedded assembly also includes at least one antenna element (). The method includes providing () the organic substrate, and embedding () the at least one moveable element on the organic substrate. The method also includes embedding () the at least one antenna element on the organic substrate.

Embedded assembly including moveable element and antenna element

An apparatus () is provided that relates to nanotubes as radiation elements for antennas and phased arrays, and more particularly to a macro-sized RF antenna for mobile devices. The antenna comprises a plurality of nanostructures (), e.g., carbon nanotubes, forming an antenna structure on a substrate (), and a radio frequency signal apparatus formed within the substrate () and coupled to the plurality of nanostructures (). The radiation element length of a nested multiwall nanotube () of an exemplary embodiment may be tuned to a desirable frequency by an electromagnetic force ().

Nanostructured tunable antennas for communication devices

A micro-electro-mechanical system varactor. The varactor includes a substrate, a lower bias conductor partially overlaying the substrate, a first signal conductor partially overlaying the substrate, a dielectric layer at least partially overlaying the first signal conductor, a support structure coupled to the substrate, and a flexible structure coupled to the support structure. The flexible structure is suspended over the substrate, includes an upper bias conductor overlaying at least part of the lower bias conductor and a top conductor overlaying at least part of the first signal conductor, configured to deflect in response to a bias voltage applied between the upper bias conductor and the lower bias conductor, and configured for separation between the top conductor and the dielectric layer by a varying separation distance dependent upon the bias voltage.

Micro-electro-mechanical system varactor

A first and second capacitor plate are provided (and). Each capacitor plate has an opening disposed therethrough with the second capacitor plate being disposed substantially opposite the first capacitor plate. A first electrically conductive path interface is then disposed () in one of these openings as is at least a second electrically conductive path interface ().

Apparatus and methods relating to electrically conductive path interfaces disposed within capacitor plate openings

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A high quality layer of compound semiconductor material is used to form a source component and a receiver component that are interconnected with an antenna and each other within a semiconductor structure that can detect a parameter, such as the speed, of an object.

Structure and method for fabricating semiconductor structures and devices for detecting an object

An embedded multilayer printed circuit includes a first ground plane () of a multilayer printed circuit board and an embedded layer. The embedded layer includes a co-planar capacitor (), a distributed inductor (), and a capacitive plate () circuit. The capacitive plate is a plate of a vertical capacitor (). The embedded layer further includes a node () of the embedded multilayer printed circuit that is formed by a connection of a first terminal of the co-planar capacitor and a first terminal of the first distributed inductor, and in some embodiments, the first capacitive plate is also connected to the node. A second terminal of one of the co-planar capacitor and the distributed inductor is connected to the first ground plane.

Embedded multilayer printed circuit

One of a plurality of capacitors embedded in a printed circuit structure includes a first electrode () overlaying a first substrate layer () of the printed circuit structure, a crystallized dielectric oxide core () overlaying the first electrode, a second electrode () overlying the crystallized dielectric oxide core, and a high temperature anti-oxidant layer () disposed between and contacting the crystallized dielectric oxide core and at least one of the first and second electrodes. The crystallized dielectric oxide core has a thickness that is less than 1 micron and has a capacitance density greater than 1000 pF/mm. The material and thickness are the same for each of the plurality of capacitors. The crystallized dielectric oxide core may be isolated from crystallized dielectric oxide cores of all other capacitors of the plurality of capacitors.

Printed circuit embedded capacitors

An optical communication between a first and second body portion connected by a rotatable member is established. A first optical fiber is attached to the first body portion and a second optical fiber is attached to the second body portion in a manner to allow the first and second optical fibers to be co-aligned with each other and with the rotatable member axis of rotation within the rotatable member. An optical signal emitted from a source on an input circuit board on the first body will transfer through the first optical fiber and be transmitted from the first fiber to the second optical fiber while concentrically aligned within the rotatable member, establishing optical communication between the source on the first body portion and a display device on the second body portion.

Optical communication device for rotary motion assemblies

A mesoscale micro electro-mechanical systems (MEMS) structure comprises an optical interface member () that moves with a pivoting member (). Such movement serves to occlude and/or to complete an optical signal pathway ().

Optical path method and apparatus

A mesoscale microelectromechanical system (MEMS) package for a micro-machine. The mesoscale micro-machine is formed on a printed circuit board () at the same time and of the same materials as the mesoscale micro-machine package. Both the micro-machine and the package have a first metal layer (), an insulating member () formed on the first metal layer, and a second metal layer () situated on the insulating layer. The package consists of a perimeter wall surrounding the micro-machine and a low-flow capping adhesive layer (). The first metal layers of both the micro-machine and the package are formed in the same process sequence, and the insulating layers of both the micro-machine and the package are formed in the same process sequence, and the second metal layers of both the micro-machine and the package are formed in the same process sequence. The low-flow capping adhesive secures an optional cover () on the package to provide an environmental seal.

Meso-microelectromechanical system package

A meso-scale MEMS device having a cantilevered beam is formed using standard printed wiring board and high density interconnect technologies and practices. The beam includes at least some polymer material to constitute its length, and in some embodiments also comprises a conductive material as a load-bearing component thereof. In varying embodiments, the beam is attached at a location proximal to an end thereof, or distal to an end thereof.

Micro electro-mechanical system method

Polarization modulator devices can be formed to take advantage of multi-layered semiconductor structures. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Structure and method for fabricating semiconductor structures and polarization modulator devices utilizing the formation of a compliant substrate

A structure for an optical switch includes a reflective layer formed over a high quality epitaxial layer of piezoelectric compound semiconductor materials grown over a monocrystalline substrate, such as a silicon wafer. The piezoelectric layer can be activated to alter the path of light incident on the reflective layer. A compliant substrate is provided for growing the monocrystalline compound semiconductor layer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.

Structure and method of fabrication for an optical switch

A semiconductor structure for implementing optical beam switching includes a monocrystalline silicon substrate and an amorphous oxide material overlying the monocrystalline silicon substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. An optical source component that is operable to transmit radiant energy is formed within the monocrystalline compound semiconductor layer. A diffraction grating including an electrochromic portion is optically coupled to the optical source component.

Growing community of inventors

Elk Grove, IL, United States of America

Robert B Lempkowski