Rca Inc.

Lucent Technologies Inc.

At+t Corp.

Robert B Comizzoli

John William Osenbach

George L Schnable

Mindaugas Fernand Dautartas

Won-Tien Tsang

Lawrence K White

Charles B Roxlo

Naresh Chand

Cheryl A Deckert

Robert D Vibronek

The specification describes a process for passivating semiconductor laser structures with severe steps in the surface topography. The technique involves atomic layer deposition to produce the passivating layer which has exceptional coverage and uniformity, even in the case of trench features with trench aspect ratios as large as 5. In addition, the passivation produced by this process has excellent environmental stability, and affords protection against air born contaminant induced degradation.

Process for passivating semiconductor laser structures with severe steps

Disclosed are high reliability semiconductor lasers that need not be maintained inside a hermetic enclosure. Such lasers can advantageously be used in a variety of applications, e.g., in optical fiber telecommunications, and in compact disc players. Such 'non-hermetic' lasers comprise facet coatings that comprise a dielectric layer that has very low water saturation value. In preferred embodiments this dielectric layer is SiO.sub.x (1.ltoreq.x&lt;2), deposited by a molecular beam method. Deposition conditions are selected to result in a dense material that is largely free of particulates and blisters, and is substantially impermeable to moisture. Among the deposition conditions is substantially normal beam incidence, and a relatively low deposition rate. Deposition is advantageously carried out under relatively high vacuum conditions. A quantitative method of determining the water level in a SiO.sub.x film is disclosed.

Article comprising a semiconductor laser with stble facet coating

A method of detecting the presence of a thin insulating film having a thickness less than about 500 angstroms disposed over a surface of a conductor comprises positioning a conductive grid adjacent the surface of the insulating film. Ions of one type polarity are deposited adjacent the insulating film through openings in the grid, the openings in the grid being sufficiently small to limit the surface charge voltage on the insulating film to less than about 50 volts. After immersing the insulating film in a suspension of charged particles having a polarity opposite to the one type, the deposition of charged particles adjacent the conductor surface then indicates the presence of the insulating film.

Method of detecting a thin insulating film over a conductor

A method of detecting a cathodic corrosion site on a metallized substrate comprises depositing molecules of a pH sensitive fluorescent dye adjacent a metallic surface of the substrate, the metallic surface having a corrosion site thereon characterized by a reduction of the hydronium ion to hydrogen (2H.sup.+ +2e.sup.- .fwdarw.H.sub.2). An electrical bias is then applied across the metallic surface, and the fluorescent dye is exposed to ultraviolet (UV) radiation, whereby fluorescence is activated at the cathodic corrosion site.

Method of detecting a cathodic corrosion site on a metallized substrate

A method of inspecting electrical devices such as integrated circuit devices which have conductors covered by a protective layer of passivating material to determine the quality of the protective layer includes treating the circuit with a fluorescein containing dye and exposing the treated device to UV radiation while applying a voltage between two conductors. Fluorescence is observable in well passivated areas of the device but not in unpassivated or inadequately passivated areas. When a device is tested before dicing from a wafer, adjacent devices to which no voltage is applied fluoresce in both passivated and unpassivated areas.

Method for inspecting electrical devices

A method of manufacturing a semiconductor device having a passivating overcoat of insulating material disposed thereover comprises treating the overcoat with a silane solution prior to encapsulating the device.

Growing community of inventors

Belle Mead, NJ, United States of America

Robert B Comizzoli