Intermolecular, Inc.

Lam Research Corporation

Novellus Systems Incorporated

Robert Anthony Sculac

Jeffrey Chih-Hou Lowe

Sandeep Mariserla

Aaron T Francis

Karl Frederick Leeser

Richard M Blank

Michael Nordin

Satbir Kahlon

Gregory P Lim

Chi-I Lang

Jon Henri

Damien Martin Slevin

Frank C Ma

Gishun Hsu

Scott Stoddard

Brian Kennedy Foster

A process module for a substrate processing tool includes a plurality of processing stations each configured to perform a process on a substrate and a mechanical indexer arranged within the process module. The mechanical indexer includes a plurality of end effectors including at least a first end effector, a second end effector, and a third end effector. Each of the plurality of end effectors extends in a radial direction from a central axis of the mechanical indexer and is configured to rotate about the central axis within the process module. The mechanical indexer is configured to position each of the plurality of end effectors at any one of the plurality of processing stations within the process module. The mechanical indexer is configured to position more than one of the plurality of end effectors at a same one of the plurality of processing stations at a same time.

Mechanical indexer for multi-station process module

A mechanical indexer for a substrate processing tool includes first and second arms each having first and second end effectors. The first arm is configured to rotate on a first spindle to selectively position the first end effector of the first arm at a plurality of processing stations of the substrate processing tool and selectively position the second end effector of the first arm at the plurality of processing stations of the substrate processing tool. The second arm is configured to rotate on a second spindle to selectively position the first end effector of the second arm at the plurality of processing stations of the substrate processing tool and selectively position the second end effector of the second arm at the plurality of processing stations of the substrate processing tool. The first arm is configured to rotate independently of the second arm.

Optimized low energy / high productivity deposition system

Multiple waste streams, including incompatible chemicals such as concentrated acids and/or strong base effluents, are handled together without the need for limiting or interrupting the processes run by the wafer processing tools. In some embodiments, waste tanks are primed with diluents, such as water, and a predetermined percentage of diluent is maintained in the waste tanks. In some embodiments, a diluent is flowed into the waste tanks concurrently with the waste pumping to generate a rinsing action for the waste tanks. Methods of the present disclosure accommodate both gravity type and vacuum type waste tanks.

Effluent management, waste dilution, effluent pre-dilution, acid waste handling

Provided are methods and systems for dispensing different chemicals used for high productivity combinatorial processing. A dispense panel may include multiple inlet lines for supplying different chemicals. Each inlet line is connected to its own three-way valve that either allows the supplied chemical to flow from the inlet line towards a dispense valve connected to a dispense manifold (during dispensing of the supplied chemical) or allows another chemical to flow from the dispense valve to a waste manifold (during priming of the dispense manifold with this other chemical). Specifically, during priming a chemical supplied from its inlet line and is passed through a corresponding three-way valve and is directed to its dispense valve and then into the dispense manifold. Other dispense valves and three-way valves of the dispense panel allow this chemical to flow out of the dispense manifold, thereby priming remaining parts of the panel.

Methods and systems for dispensing different liquids for high productivity combinatorial processing

Methods for combinatorially processing semiconductor substrates are provided. The methods may involve receiving a substrate into a combinatorial processing chamber and sealing a plurality of flow cells against a surface of the substrate. The plurality of flow cells is enclosed within the combinatorial processing chamber to define an enclosed external environment for the plurality of flow cells. A pressure differential is created between a reaction area of the plurality of flow cells of the combinatorial processing chamber and the external environment, wherein each flow cells of the plurality of flow cells defines a site isolating region of the substrate. The regions the substrate are then combinatorially processed.

Reactor cell isolation using differential pressure in a combinatorial reactor

A method for combinatorially processing a substrate is provided. The method includes providing a substrate disposed on a substrate support. The substrate and the substrate support are raised against a plurality of sealing surfaces of corresponding sleeves of a plurality of flow cells of a combinatorial processing chamber. The combinatorial processing chamber is operable to concurrently process different regions of the substrate differently. A sealing pressure between the sealing surface of the sleeves and a surface of the substrate is monitored and the raising is terminated when a desired pressure is obtained. The different regions of the substrate are then processed differently.

Method and apparatus for controlling force between reactor and substrate

The embodiments describe methods for controlling the particles generated when cleaning and drying a wafer in a spin rinse dryer (SRD) module. In some embodiments, the substrate surface is cooled by dispensing deionized (DI) water across the surface of the substrate, while the substrate rests on the SRD chuck. In addition, a method for controlling the particles generated when sleeves in a processing module or SRD contact a substrate surface during a clamping operation or when the sleeves are removed from the substrate surface is provided. A bottom edge or lip of the sleeves and/or the surface of the wafer contacting the sleeve is wetted during clamping/unclamping operations. Alternatively, the substrate may be wetted prior to clamping/unclamping operations.

Processing and cleaning substrates

Provided herein are improved methods of depositing carbon-based films using acetylene as a precursor. The methods involve using a low-vapor pressure solvent, e.g., dimethylfluoride (DMF) to stabilize the acetylene and delivering the acetylene to a deposition chamber. The methods provide improved wafer-to-wafer thickness uniformity and increase the usable amount of acetylene in an acetylene source to over 95%.

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Lake Oswego, CA, United States of America

Robert Anthony Sculac