International Business Machines Corporation

Delaware Capital Formation, Inc.

Robert Anthony Rita

John Ulrich Knickerbocker

Mukta S Farooq

Jon Alfred Casey

Herbert I Stoller

David Clifford Long

Shaji Farooq

Harvey Charles Hamel

Kathleen M Wiley

Dinesh Gupta

Mukta G Farooq

Govindarajan Natarajan

Benjamin V Fasano

Mark J LaPlante

Thomas Anthony Wassick

Krystyna Waleria Semkow

Brian Richard Sundlof

Richard Francis Indyk

Donald Rene Wall

Rao Venkateswara Vallabhaneni

Glenn A Pomerantz

James G Balz

Michael Berger

Srinivasa N Reddy

Lori A Maiorino

Patrick E Spencer

Young-Ho Kim

Thomas M Shaw

George Frederick Walker

Stephen Mark Rossnagel

Raschid Jose Bezama

Emanuel Israel Cooper

Sarah Huffsmith Knickerbocker

Srinivasa S N Reddy

Arthur Gilman Merryman

Peter Richard Duncombe

Jawahar P Nayak

Jae M Park

Jungihl Kim

Robert J Sullivan

Charles J Hendricks

Richard Philip Surprenant

Robert R Shaw

Mark O Neisser

Michael A Cohn

Jerome D Cohen

Farid Youssif Aoude

Edward A Giess

James M Brownlow, Deceased

Friedel Muller-Landau

Jon A Van Hise

Roy Rongqing Yu

Krishna Gandhi Sachdev

David Edward Kotecki

Sudipta Kumar Ray

Subhash Laxman Shinde

Wiren Dale Becker

Lester W Herron

Thomas Edward Lombardi

Gregory M Johnson

Ryan Wayne Wuthrich

Brenda Lee Peterson

Gregg B Monjeau

Christopher N Collins

Kenneth A Bird

Takeshi Takamori

Alan Piciacchio

L Wynn Herron

Martin E Klepeis

Nancy A Wier-Cavalieri

Katharine G Frase

John Paul Gauci

Leslie J Wiands

Adrienne M Tirch

A method to repair ceramic substrates is disclosed using a novel polyimide polymer which has high thermal stability, resistance to fluxes and flux residue cleaning solvents and processes, good mechanical properties, good adhesion to all contacting surfaces with low moisture uptake and good flow properties suitable for repairing chipped ceramic, filling deep trench or vias and writing passivation lines with automated process The polyimide polymer is made by reacting aromatic dianhydride and aromatic diamine monomers with a stoichiometric offset and end capping the resulting polymer when the reaction is completed. The preferred polyimide is made using a molar excess of diamine which is end-capped using an anhydride.

Polyimide compositions and use thereof in ceramic product defect repair

A glass-ceramic is provided having a thermal expansion coefficient in a range of 3-6 ppm/&#xb0; C., a dielectric constant that is less than 5 and a Quality factor Q of at least 400. The glass-ceramic consists essentially of SiOin a range of 45-58 wt %, AlOin a range of 10-18 wt % and MgO in a range of 10-25 wt %. A method of making the glass-ceramic is also provided. Further, an electronic package is also provided, including a base member and a glass-ceramic substrate bonded to the base member.

Low loss glass-ceramic materials, method of making same and electronic packages including same

A multilayer ceramic repair process which provides a new electrical repair path to connect top surface vias. The repair path is established between a defective net and a redundant repair net contained within the multilayer ceramic substrate. The defective net and the repair net each terminate at surface vias of the substrate. A laser is used to form post fired circuitry on and in the substrate. This is followed by the electrical isolation of the defective net from the electrical repair structure and passivation of the electrical repair line.

Electronic package repair process

A glass-ceramic is provided having a thermal expansion coefficient in a range of 4.0 to 8.5 ppm/&#xb0; C., a dielectric constant in a range of 5&#x2013;7 and a Quality factor Q of at least 400. The glass-ceramic consists essentially of SiOin a range of 40&#x2013;55 wt %, AlOin a range of 7&#x2013;22 wt %, MgO in a range of 6 to less than 26 wt %, and at least one of BaO in an amount up to 35 wt %, SrO in an amount up to 37 wt % and ZnO in an amount up to 17 wt %. An electronic package is also provided, including one of a metal and sintered ceramic base member and a glass-ceramic substrate bonded to the base member.

Glass-ceramic materials and electronic packages including same

An interposer, located between an integrated circuit having power, ground and signal connections and a ceramic substrate having power, ground and signal connections, that includes an oxide layer formed on a polished surface of a silicon substrate, a thin film dielectric capacitor formed on the oxide layer, a plurality of metallized that electrically connect to either of the electrodes of the thin film dielectric capacitor, and vias than conduct power, ground and signals between a the ceramic substrate and the integrated circuit. The interposer connects the metallized vias to the integrated circuit by solder connections and also connects the vias conducting power, ground and signals from the ceramic substrate to the interposer by solder connections. The dielectric of the thin film dielectric capacitor may be selected from the group of high-K titanates, such as, barium zirconate titanate, barium strontium titanate, pure barium titanate, barium titanate modified with Pb, Nb, W, Ca, Mg, and Zn, lead titanate, lead zirconate titanate, and polycrystalline lanthanum-modified lead zirconate titanate, or other high-K dielectrics, such as, lead niobate and its derivatives, and lead tungstate and its derivatives.

Interposer capacitor built on silicon wafer and joined to a ceramic substrate

A method and structure to form surface plating metallization on a substrate. Two layers of tape are applied to the surface of the substrate. A first path is cut through both layers of tape exposing the substrate surface. The first path connects at least one conductive via on the top surface of the substrate. A second path is cut through the second layer of tape exposing the first layer of tape. The second path is routed from the first path to an edge of the substrate A seed layer is deposited over the surface of the second layer of tape thereby creating a seeded plating path in the first path and a sacrificial seeded conduction path in the second path. Connecting the sacrificial seeded conduction path to a plating potential at the edge of the substrate creates a plated path on the surface of the substrate. The sacrificial path is removed when the tape is removed.

Method of selective plating on a substrate

A multi chip module substrate arranged with repair vias and repair lines extending between repair vias of the chip sites of the module by which repairs can be effected to overcome defects in the module circuits and a method for effecting the repairs of defects in the circuits of this module. A defect can occur in any one of a first signal via, a second signal via, and a circuit line extending between and intended to electrically connect the first signal via and the second signal via. After a defective circuit is identified, the signal vias of the circuit are isolated. Then, the first signal via of the defective circuit is electrically connected to that repair via of the chip site having the first signal via that is connected to that repair via of the chip site having the second signal via and the second signal via of the defective circuit is electrically connected to that repair via of the chip site having the second signal via that is connected to that repair via of the chip site having the first signal via.

Apparatus and method for repairing electronic packages

A process wherein a low viscosity, metal-containing paste is screened onto a ceramic greensheet and then sets up to increase its viscosity. In one method, the low viscosity is caused by excess solvent which is then blotted or otherwise removed so that the viscosity of the paste is increased. In an alternative method, the low viscosity paste contains a cross-linking agent which causes the paste to increase its viscosity after screening.

Process for screening features on an electronic substrate with a low viscosity paste

A process for fabricating a structure using a metal carrier and forming a double capacitor structure. The process comprises forming a first via hole through the metal carrier, forming a dielectric layer around the metal carrier and inside the first via hole, forming a second via hole through the dielectric layer and the metal carrier, and filling at least one of the via holes with conductive material. In one preferred embodiment, the process further comprises forming a third via hole through the metal carrier before the forming of a dielectric layer, wherein the dielectric layer is formed around the metal carrier, inside the first via hole, and inside the third via hole. The first via hole, the second via hole, and the third via hole are all filled with a conductive material. In one preferred embodiment, the dielectric layer comprises a top surface opposed to a bottom surface, and electrodes are formed on at least one of the top surface and the bottom surface of the dielectric layer.

Decoupling capacitor method and structure using metal based carrier

The dielectric constant of low loss tangent glass-ceramic compositions, such as cordierite-based glass ceramics, is modified over a range by selective addition of high dielectric constant ceramics, such as titanates, tantalates and carbides and metals, such as copper. The low loss tangent is retained or improved over a range of frequencies, and the low CTE of the glass-ceramic is maintained. BaTiO , SrTiO and Ta O produce the most effective results.

Low loss glass ceramic composition with modifiable dielectric constant

A multi-layer ceramic capacitor and method of manufacturing the capacitor, the capacitor having signal vias surrounded by an area containing a material having a low dielectric constant, the via and surrounding area of low dielectric constant material inserted in a material having a high dielectric constant.

High k dielectric material with low k dielectric sheathed signal vias

The present invention relates generally to a new metal/magnetic-ceramic laminate with through-holes and process thereof. More particularly, the invention encompasses a new process for fabrication of a large area ceramic laminate magnet with a significant number of holes, integrated metal plate(s) and co-sintered electrodes for electron and electron beam control. The present invention also relates to a magnetic matrix display (MMD), and electron beam source, and methods of manufacture thereof.

Low temperature sintering of ferrite materials

The capacitor on a ceramic substrate one by unique film metallization including in one embodiment an in situ oxidation of titanium to create a metal oxide capacitor. The combination of metals when used with the appropriate optimized oxidation conditions and parameters ensures a high yielding capacitor with high capacitance in absence of noble metals and with ease of manufacture providing a low cost, high yield capacitor on ceramic.

Thin film capacitor on ceramic

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Wappingers Falls, NY, United States of America

Robert Anthony Rita