First Solar, Inc.

Primestar Solar, Inc.

Robert Andrew Garber

Scott Daniel Feldman-Peabody

Donald Franklin Foust

Hongbo Cao

Wyatt Keith Metzger

Roman Shuba

Luke Wayne Jacobson

Laura Anne Clark

Yinghui Shan

William Schaffer

Troy Alan Berens

Fred Harper Seymour

Scott L French

Eric Boese

Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Methods of treating a semiconductor layer

Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.

Photovoltaic devices

Thin film photovoltaic devices are generally provided having three terminals. In one embodiment, the thin film photovoltaic device can include a first submodule defined by a first plurality of photovoltaic cells between a first dead cell and a first terminal cell; a second submodule defined by a second plurality of photovoltaic cells between a second dead cell and a second terminal cell; and a joint bus bar electrically connected to the first dead cell and the second dead cell. The first dead cell is adjacent to the second dead cell, with the first dead cell being separated from the second dead cell via a separation scribe. Methods are also generally provided for forming a thin film photovoltaic device.

Three terminal thin film photovoltaic module and their methods of manufacture

Methods for isolating thin film photovoltaic cells on a superstrate are provided. The method includes focusing a laser beam onto a first surface of the superstrate to remove a thin film stack positioned on a second surface of the superstrate, and directing the laser beam across the first surface of the superstrate to form an isolation scribe that is substantially free from the thin film stack. The thin film stack can include a transparent conductive oxide layer on the second surface, an n-type window layer on the transparent conductive oxide layer, and an absorber layer on the n-type window layer. The laser beam can have a laser wavelength of about 370 nm or less, and/or can have a laser wavelength such that the transparent conductive oxide layer absorbs at least about 80% of the laser beam at the laser wavelength.

Methods of short wavelength laser scribing of a thin film photovoltaic device

Growing community of inventors

Denver, CO, United States of America

Robert Andrew Garber