Infineon Technologies Ag

Siemens Aktiengesellschaft

Robert Allinger

Robert Strenz

Wolfgang Pockrandt

Klaus Knobloch

Gottfried Beer

Thomas Kern

Juergen Hoegerl

Christian Peters

Karl Hofmann

Snezana Jenei

Armin Wedel

Siegfried Tscheternigg

Robert Hollfelder

A method for updating a memory, which comprises several blocks, wherein each of the several blocks comprises multi-level cells and is operable in an MLC-mode or in a SLC-mode, wherein each multi-level cell may store more than one bit, wherein the method includes for each block to be updated: (a) copying the content of the block to a buffer block; (b) erasing the block; (c) writing the content of the block from the buffer block and an updated content for this block to this block, utilizing the capability of the block to be operated in the MLC-mode; (d) copying the updated content of the block to the buffer block; (e) erasing the block; and (f) writing the updated content from the buffer block to the block, utilizing the capability of the block to be operated in the SLC-mode. Also, therefore is a corresponding device.

Updating a memory

A nonvolatile memory device having a first resistive element coupled between a common node and a bit line; a second resistive element coupled between the common node and a word line, wherein the first and second resistive elements are coupled between different metal layers; and a pass transistor having a gate coupled to the common node, a first node coupled to a reference voltage, and a second node coupled to an output, wherein the word line is orthogonal to the bit line.

Nonvolatile memory device

A method for applying a magnetic shielding layer to a substrate is provided, wherein a first magnetic shielding layer is adhered to a first surface of the substrate. A first film layer is adhered to the first magnetic shielding layer and the first magnetic shielding layer is more adherent to the first surface than the film layer to the first magnetic shielding layer.

Method for applying magnetic shielding layer, method for manufacturing a die, die and system

A memory having an array of perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM) cells, wherein each cell has a magnetic layer stack. A magnetic shield disposed between the cells and having a minimum height of at least the height of the magnetic layer stacks.

Magnetic shielding of perpendicular STT-MRAM

A nonvolatile memory device having a first resistive element coupled between a common node and a bit line; a second resistive element coupled between the common node and a word line; and a pass transistor having a gate coupled to the common node, a first node coupled to a reference voltage, and a second node coupled to an output, wherein the word line is orthogonal to the bit line.

Nonvolatile memory device having a gate coupled to resistors

In various embodiments, a chip for a chip package is provided. The chip may include a substrate and an integrated circuit over the substrate. The integrated circuit may include a test circuit, for example a built-in self-test circuit, and an operation circuit, the test circuit including one or more first driver stages each having a first driver performance and the operation circuit including one or more second driver stages each having a second driver performance which is different from the first driver performance, first contacts electrically coupled with the first driver stages, and second contacts electrically coupled with the second driver stages, wherein the test circuit and the first contacts are configured to provide a test mode for testing the integrated circuit and wherein the operation circuit and the second contacts are configured to provide an operating mode of the integrated circuit being different from the test mode.

Chip, chip package and die

A method for operating a multistage counter in only one counting direction is described. The counting value of a single-stage auxiliary counter that can be changed in only one counting direction is changed in predetermined counting values of the multistage counter. The respective counting value states of the multistage counter and of the single-stage auxiliary counter are registered. First authenticity data is generated by logically linking the counting value of the auxiliary counter to supplementary data.

Method and configuration for operating a multistage counter in one counting direction

A method of operating a multistage counter in only one counting direction includes the step of changing a counter reading of a single-stage auxiliary counter at given counter readings of the multistage counter. The single-stage auxiliary counter and the multistage counter can only be changed in one counting direction. Respective counter readings of the multistage counter and of the single-stage auxiliary counter are registered. Values of the respective counter readings of the single-stage auxiliary counter and of the multistage counter are compared with one another, and an indicator signal is generated based on a comparison result determined in the comparing step.

Method and arrangement for operating a multistage counter in one counting direction

A circuit configuration for detecting a functional disturbance has a first and a second differential amplifier. The outputs of the differential amplifiers are connected to the inputs of a gate. One input of the differential amplifiers is in each case connected to a reference potential terminal. The respective other input of the first and second differential amplifiers is connected to a monitoring means, which responds in the event of a change in the supply voltage at a supply potential terminal of the circuit configuration.

Circuit configuration for detecting a functional disturbance

A semiconductor chip with a surface covering includes circuits which are produced in at least one layer of a semiconductor substrate and disposed in at least one group. Supply and signal lines extend in at least one interconnect plane over at least one circuit group and have a maximum width so that a distance between each two lines is at a minimum.

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Unterhaching, Germany

Robert Allinger