Semitool, Inc.

Other

Aes Industries Inc

Robert Allen Weaver

Paul R McHugh

Gregory J Wilson

Thomas Lee Ritzdorf

Linlin Chen

Kyle Moran Hanson

Raymon F Thompson

Ronald Schlagenhauser

Jerry Simchuk

Steven L Peace

Curt T Dundas

Brian Aegerter

Steve L Eudy

John Z Smith

Rikki Scott LaBere

Coby S Grove

Victor J Williams

Martin Jones

William McEntire

Kevin Peck

Jeffrey D Weaver

Jeffrey M Curran

Apparatus and methods for shifting the phase between a driver gear and a driven gear in communication by a timing belt are provided as well as methods for configuring the apparatus. The apparatus may continuously vary the phase relationship between the driver gear and the driven gear.

Apparatus and methods for continuous variable valve timing

A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Apparatus and method for electrochemically depositing metal on a semiconductor workpiece

A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece

A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Turning electrodes used in a reactor for electrochemically processing a microelectronic workpiece

A rotor that may be used by itself or in a processing machine for processing semiconductor wafers includes two pairs of combs. A lock down mechanism has a lock bar, temporarily engaged and moved by a loading/unloading robot, drives a retainer against the edges of the wafers, to better hold them in place during processing. Contamination via generation of particles is reduced. Combs on the rotor have a resilient strip. The lower edges of the wafers compress slightly into or deflect the resilient strip, when urged into place by the lock down mechanism.

Lockdown rotor for a processing machine

A method and apparatus for processing a microelectronic workpiece using metrology. The apparatus can include one or more processing or transport units, a metrology unit, and a control unit coupled to the metrology unit and at least one of the processing or transport units. The control unit can modify a process recipe or a process sequence of the processing unit based on a feed forward or a feed back signal from the metrology unit. The control unit can also provide instructions to the transport unit to move the workpiece to a selected processing unit. The processing unit can include, inter alia, a seed layer deposition unit, a process layer electrochemical deposition unit, a seed layer enhancement unit, a chemical mechanical polishing unit, and/or an annealing chamber arranged for sequential processing of a workpiece. The processing units can be controlled as an integrated system using one or more metrology units, or a separate metrology unit can provide input to the processing units.

Methods and apparatus for processing microelectronic workpieces using metrology

A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

In an electroplating reactor for plating a spinning wafer, a diffusion plate is supported above an anode located within a cup filled with process fluid within the reactor. The diffusion plate includes a plurality of openings which are arranged in a spiral pattern. The openings allow for an improved plating thickness distribution on the wafer surface. The openings can be elongated slots curved along the direction of the spiral path.

Diffuser with spiral opening pattern for electroplating reactor vessel

An apparatus for thermally processing a microelectronic workpiece is set forth. The apparatus comprises a first assembly and a second assembly, disposed opposite one another, with an actuator disposed to provide relative movement between the first assembly and second assembly. More particularly, the actuator provides relative movement between at least a loading position in which the first assembly is in a state for loading or unloading of the microelectronic workpiece, and a thermal processing position in which the first assembly and second assembly are proximate one another and form a thermal processing chamber. A thermal transfer unit is disposed in the second assembly and has a workpiece support surface that is heated and cooled in a controlled manner. As the first assembly and second assembly are driven to the thermal processing position by the actuator, an arrangement of elements bring a surface of the microelectronic workpiece into direct physical contact with the workpiece support surface of the thermal transfer unit. In a preferred embodiment, the thermal transfer unit is comprised of a low thermal mass heater and a high thermal mass cooler disposed to controllably cool the low thermal mass heater.

Method and apparatus for processing a microelectronic workpiece including an apparatus and method for executing a processing step at an elevated temperature

An apparatus and method for processing a microelectronic workpiece at an elevated temperature. In one embodiment, the apparatus includes a workpiece support positioned to engage and support the microelectronic workpiece during operation. The apparatus can further include a heat source having a solid engaging surface positioned to engage a surface of the microelectronic workpiece with at least one of the heat source and the workpiece support being movable relative to the other between a first position with the microelectronic workpiece contacting the engaging surface of the heat source and a second position with the microelectronic workpiece spaced apart from the engaging surface. The heat source is sized to transfer heat to the microelectronic workpiece at a rate sufficient to thermally process a selected material of the microelectronic workpiece when the microelectronic workpiece is engaged with the heat source. A heat sink can be positioned at least proximate to the heat source to cool both the heat source and the microelectronic workpiece.

Method and apparatus for processing a microelectronic workpiece at an elevated temperature

Method for electrochemically depositing metal on a semiconductor workpiece

In a machine for processing semiconductor wafers, a rotor includes two pairs of combs. A lock down mechanism has a lock bar, temporarily engaged and moved by a loading/unloading robot, drives a retainer against the edges of the wafers, to better hold them in place during processing. Contamination via generation of particles is reduced. Combs on the rotor have a resilient strip. The lower edges of the wafers compress slightly into or deflect the resilient strip, when urged into place by the lock down mechanism.

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Whitefish, MT, United States of America

Robert Allen Weaver