Texas Instruments Corporation

Unitrode Corporation

Robert Alan Neidorff

Benjamin Stassen Cook

Barry Jon Male

Steve Kummerl

Joseph Maurice Khayat

Isaac D Cohen

Richard Lee Valley

Described examples include sensor apparatus and integrated circuits having a package structure with an internal cavity and an opening that connects of the cavity with an ambient condition of an exterior of the package structure, and an electronic sensor structure mechanically supported by wires in the cavity and including a sensing surface exposed to the cavity to sense the ambient condition of an exterior of the package structure.

Electronic sensors with sensor die in package structure cavity

In described examples, an integrated circuit includes a leadframe structure, which includes electrical conductors. A first coil structure is electrically connected to a first pair of the electrical conductors of the leadframe structure. The first coil structure is partially formed on a semiconductor die structure. A second coil structure is electrically connected to a second pair of the electrical conductors of the leadframe structure. The second coil structure is partially formed on the semiconductor die structure. A molded package structure encloses portions of the leadframe structure. The molded package structure exposes portions of the first and second pairs of the electrical conductors to allow external connection to the first and second coil structures. The molded package structure includes a cavity to magnetically couple portions of the first and second coil structures.

Isolator integrated circuits with package structure cavity and fabrication methods

Methods and apparatus to increase efficiency of a power converter using a bias voltage on a low side drive gate are disclosed. An example power converter includes an inductor; a transistor coupled to the inductor; and a driver coupled to a gate of the transistor, the driver to apply (A) a first voltage to the gate to enable the transistor, (B) a second voltage to the gate to disable the transistor, and (C) a third voltage to the gate during a transition between applying the first voltage and the second voltage, the third voltage being between the first voltage and the second voltage.

Increasing efficiency of a switched mode power converter

A galvanic isolation device includes a first integrated circuit (IC) die that has communication circuitry formed in a circuit layer below the top surface. A first conductive plate is formed on the IC die proximate the top surface, and is coupled to the communication circuitry. A dielectric isolation layer is formed over a portion of the top surface of the IC after the IC is fabricated such that the dielectric isolation layer completely covers the conductive plate. A second conductive plate is juxtaposed with the first conductive plate but separated by the dielectric isolation layer such that the first conductive plate and the second conductive plate form a capacitor. The second conductive plate is configured to be coupled to a second communication circuit.

Galvanic isolation device

In described examples of forming an integrated circuit wave device, a method includes: (a) affixing an integrated circuit die relative to a substrate; (b) creating a form relative to the integrated circuit die and the substrate; and (c) forming a wave shaping member having a shape conforming at least in part to a shape of the form.

Integrated circuit wave device and method

Disclosed examples include sensor apparatus and integrated circuits having a package structure with an internal cavity and an opening that connects of the cavity with an ambient condition of an exterior of the package structure, and an electronic sensor structure mechanically supported by wires in the cavity and including a sensing surface exposed to the cavity to sense the ambient condition of an exterior of the package structure.

In some embodiments, a system comprises a power metal oxide semiconductor field effect transistor (MOSFET) configured to provide power in the system, a plurality of auxiliary MOSFETs, and a switch network configured to switchably and simultaneously couple a first of the plurality of auxiliary MOSFETs to the power MOSFET and a second of the plurality of auxiliary MOSFETs to a feedback voltage regulator. The switch network is further configured to switchably and simultaneously couple the first of the plurality of auxiliary MOSFETs to the feedback voltage regulator and the second of the plurality of auxiliary MOSFETs to the power MOSFET. The feedback voltage regulator is configured to cause a voltage at one or more of the plurality of auxiliary MOSFETs to match a voltage at the power MOSFET.

Auxiliary MOSFETs for switchable coupling to a power MOSFET

Disclosed examples include integrated circuits with a leadframe structure, a first circuit structure including a light source configured to generate a light signal along an optical path, a second circuit structure including a light sensor facing the optical path to receive the light signal, and a molded package structure enclosing portions of the leadframe structure, the molded package structure having a cavity defined by an interior surface of the molded package structure, the optical path extending in the cavity between the first and second circuit structures.

A method of forming, and a resulting, an integrated circuit wave device. The method (i) affixes an integrated circuit die relative to a substrate; (ii) creates a form relative to the integrated circuit die and the substrate; and (iii) forms a wave shaping member having a shape conforming at least in part to a shape of the form.

Integrated circuits with a molded package including a cavity and a semiconductor die spaced from an interior surface of the molded package within the cavity. The semiconductor die includes one or more electrical components, a thermal control component to control the temperature of the electrical component, and a driver to provide a current or voltage signal to the thermal control component at least partially according to a setpoint signal.

Integrated circuits with thermal isolation and temperature regulation

A trimmed thermal sensing system can include a temperature sensitive circuit configured to provide an output that varies as a function of temperature and in response to a trimmed bandgap reference signal. A trim network is coupled to the temperature sensitive circuit. The trim network trims the temperature sensitive circuit in an opposite direction of trimming implemented to provide the trimmed bandgap reference signal, such that temperature tolerance of the temperature sensitive circuit is reduced.

Trimmed thermal sensing

A circuit has a first sense resistor circuit having components including a first-circuit active element to provide a sense resistance to sense a current in a load in series therewith, the sense resistance being established by an input command voltage. A second sense resistor circuit has components replicating the components of the first sense resistor circuit including a replicated active element, a resistance of the replicated active element also being established by the input command voltage. A precision resistor is coupled to the replicated active element to provide a load thereto. When the input command voltage establishes a voltage across the replicated active element, a voltage is established across the first-circuit active element in proportion thereto to command a desired current in the load.

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Bedford, NH, United States of America

Robert Alan Neidorff