Bae Systems Information and Electronic Systems Integration Inc.

Schilmass Co. L.l.c.

Retro Reflective Optics, LLC

Robert Actis

Robert J Lender, Jr

Kanin Chu

John R Muir

Bernard J Schmanski

Steven Rajkowski

Edwin C Powers

Eldon M Sutphin

Kirby B Nichols

Pane-Chane Chao

Jared P Majcher

Dong Xu

Robert C Marion

Blair E Coburn

Virginia W Murray

Wendell M T Kong

Steve M Rajkowski

Sue May Jessup

Frank A Mannarino

Robert J Lender

A system and method for using an embedded microprocessor in an RF amplifier. The use of an embedded microprocessor avoids manual calibration. The Microprocessor collects initial amplifier performance data based on a set of parameters and calculates the needed corrections. The microprocessor can change levels within the circuit to achieve those operating points. The embedded microprocessor sets voltage levels with internal circuitry and communicates this information externally through a serial communication port, or the like, to allow a user to communicate with and look at the amplifier data and readjust the internal bias levels, as needed. Thus, the internal microprocessor provides for calibration, self-testing, and monitoring of the RF amplifier and also functions as an in situ bias and temperature compensation controller for use in the presence of temperature variation and provides bias sequencing control to protect against improper applied timing of voltage inputs to the amplifier.

Low swap circuit card design for RF power amplifiers

A solid-state amplifier architecture is disclosed. In some embodiments, the disclosed architecture may include first and second channel chipsets configured to amplify either the entire instantaneous frequency band of a radio frequency (RF) input signal or, respectively, sub-bands thereof, which may be divided proportionally between the two chipsets. In some cases, the chipsets may be configured to amplify frequencies in excess of the entire K-band and K-band frequencies simultaneously. In some cases, the architecture may be configured to address a signal received, for instance, from an electronic warfare (EW) system to a log amplifier stage configured to output a signal to the EW system, in response to which the EW system may generate a RF signal for amplification by the architecture for transmission. To facilitate heat dissipation, the architecture may be coupled, in part or in whole, with a thermally conductive carrier, optionally with an intervening diamond heat spreader layer.

High power radio frequency amplifier architecture

An ultra-wideband high-power solid-state transmitter for electronic warfare applications which includes a plurality of wideband Gallium-Nitride (GaN) semiconductor monolithic-microwave integrated circuits (MMICs), a spatial power combiner to sum the aggregate contribution of the MMICs, a wide bandwidth small form factor driver amplifier module to supply the required gain in the transmitter, and a thermal management system.

Ultra-wideband high-power solid-state transmitter for electronic warfare applications

In summary, a vertical metalized transition in the form of a via goes from the back side of a high thermal conductivity substrate and through any semiconductor layers thereon to a patterned metalized strip, with the substrate having a patterned metalized layer on the back side that is provided with a keep away zone dimensioned to provide impedance matching for RF energy coupled through the substrate to the semiconductor device while at the same time permitting the heat generated by the semiconductor device to flow through the high thermal conductivity substrate, through the back side of the substrate and to a beat sink.

Method and design of an RF thru-via interconnect

Techniques and architecture are disclosed for providing an ultra-wideband, multi-channel solid-state power amplifier architecture. In some embodiments, the architecture includes a power divider which splits an input signal and delivers that split signal to a plurality of downstream channel chipsets. Each channel chipset is configured to amplify a sub-band of the original full-band input signal and to provide the resultant amplified sub-band for downstream use, such as for transmission by an antenna operatively coupled with that channel. In the aggregate, the amplified sub-bands provide coverage of the same ultra-wideband frequency range of the original input signal, in some cases. In some embodiments, the architecture provides high radio frequency (RF) power with good amplifying efficiency and ultra-wide instantaneous frequency bandwidth performance in a small-form-factor package. In some instances, control circuitry is provided to control which chipset die(s) are enabled/disabled, thus providing control over gain and power levels of the output signal(s).

Ultra-wideband high power amplifier architecture

A high power amplifier architecture is disclosure. One example configuration includes a first plurality of distributed amplification stages operatively coupled in a first string. A conductive trace associated with the first string provides a stepped structure, such that the associated inductance successively decreases from input to output of the first string. A second plurality of distributed amplification stages is operatively coupled in a second string, and a conductive trace associated therewith provides a stepped structure, such that the associated inductance successively decreases from input to output of the second string. In one example case, each of the first and second strings comprises gallium nitride transistor amplification stages formed on silicon carbide. The module may further include a heat spreader material that thermally and electrically couples to the amplification stages. The conductive trace associated with one string can be shared with another string.

High power amplifier

A broadband high power amplifier architecture is disclosed. One example configuration includes a first plurality of distributed amplification cells connected in a first string, wherein a conductive trace operatively coupling outputs of the first string cells is a stepped structure, such that the associated inductance successively decreases from a first cell to a last cell of the first string. The amplifier further includes a second plurality of distributed amplification cells connected in a second string, wherein a conductive trace operatively coupling outputs of the second string cells is a stepped structure, such that the associated inductance successively decreases from a first cell to a last cell of the second string. A combiner combines output signals of the first and second strings. Additional strings and/or stages can be provided, and the degree of combining will depend, for example, on factors such as the application and desired output power.

Broadband high power amplifier

A number of identical non-uniformly distributed ultra-wideband power amplifier string building blocks are coupled together to form an ultra-wide bandwidth high-power amplifier. The non-uniform distribution results in an amplifier utilizing modular string building blocks that have input and output impedances with only real values. This permits the strings to be replicated and connected together with simple impedance matching. The internal impedance matching associated with the non-linear distribution also absorbs parasitic capacitance to permit the ultra-broadband operation. In one embodiment identical transistors are used for each cell so that the strings may be identically replicated. This permits modular re-use without reconfiguration. In one embodiment a non-uniform distributed power amplifier built using the subject building blocks provides an ultra-wideband multi-octave device suitable for electronic warfare and communications applications, especially to replace traveling wave tubes.

Solid-state ultra-wideband microwave power amplifier employing modular non-uniform distributed amplifier elements

A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on the gate-insulator layer.

Growing community of inventors

Burlington, MA, United States of America

Robert Actis