International Business Machines Corporation

The Carborundum Company

Crystalline Materials Corporation

Other

Carborundum Corporation

Robert A Youngman

Jonathan H Harris

Subhash Laxman Shinde

Lester W Herron

Benjamin V Fasano

Jon Alfred Casey

Robert Hannon

Niranjan Mohanlal Patel

Rao Venkateswara Vallabhaneni

David B Goland

Gregory M Johnson

Carla Natalia Cordero

Andrew Michael Reitter

Takeshi Takamori

Richard A Shelleman

Irvin Huseby

Thomas S Nemecek

Rudolph C Enck

A controlled dielectric loss, sintered aluminum nitride body having a density of greater than about 95% theoretical, a thermal conductivity of greater than about 100 W/m-K, and a dissipation factor measured at room temperature at about 1 KHz selected from:

Process for making a low electrical resistivity, high purity aluminum

Disclosed is a method of forming an aluminum nitride article. The method includes the steps of adding platinum to a composition including a binder, aluminum nitride particles and a sintering aid; forming the composition into an article; placing the article in a substantially non-carbonaceous container; and sintering the article in a reducing atmosphere to cause removal of the binder and densification of the aluminum nitride article, wherein the platinum catalyzes the removal of the binder.

Method of forming an aluminum nitride article utilizing a platinum

An aluminum nitride ceramic having enhanced properties suitable for electronic packaging applications can be prepared from a synergistic aluminum nitride powder/sintering aid mixture, in which the sintering aid is formulated to provide a resultant desirable second phase within the sintered body. The aluminum nitride powder/sintering aid mixture can be formed into green sheet-metal laminates and sintered at low temperature to yield high density, high electrical resistivity, and high thermal conductivity metal ceramic sintered bodies with low camber.

Low temperature sintered, resistive aluminum nitride ceramics

Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

Aluminum nitride body having graded metallurgy

An aluminum nitride ceramic having desired properties suitable for electronic packaging applications can be prepared from a novel aluminum nitride powder/sintering aid mixture. The sintering aid comprises a glassy component formed from alumina, calcia and boria, and a non-vitreous component comprising an element or compound of a metal of Group IIa, IIIa, or the lanthanides, preferably crystalline oxides, reactibis with the crystallized glass component and the alumina from the Al N grains. Alternatively, the sintering aid comprises a multi-component glass composition capable of forming the above components upon melting and thereafter crystallizing upon reaction.

Low temperature sintering route for aluminum nitride ceramics

An aluminum nitride ceramic having desired properties suitable for electronic packaging applications can be prepared from a novel aluminum nitride powder/sintering aid mixture. The sintering aid comprises a glassy component formed from alumina, calcia and boria, and a non-vitreous component comprising an element or compound of a metal of Group IIa, IIIa, or the lanthanides, preferably crystalline oxides, reactible with the crystallized glass component and the alumina from the AlN grains. Alternatively, the sintering aid comprises a multi-component glass composition capable of forming the above components upon melting and thereafter crystallizing upon reaction.

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Paradise Valley, AZ, United States of America

Robert A Youngman