Xilinx, Inc.

Robert A Olah

Qi Lin

Anders T Dejenfelt

Michael G Ahrens

David Chiang

Jesse H Jenkins, Iv

Sholeh Diba

Diane M Hoffstetter

A voltage regulator circuit in an integrated circuit (IC) device such as a Complex Programmable Logic Device (CPLD) comprises a reference voltage generator, a tuning circuit, and an output driver circuit. The reference voltage generator converts an external supply voltage provided to the IC device into a stable reference voltage. The tuning circuit converts the stable reference voltage into a desired internal supply voltage, such as the reduced voltage required by deep sub-micron transistors. The output driver circuit provides the desired internal supply voltage with sufficient current to properly power the circuits of the IC device. The tuning circuit includes an op-amp and resistive elements configured in a voltage divider configuration in the negative feedback loop of the op-amp. The output of the op-amp can be set to the desired internal supply voltage by properly sizing the resistive elements. By making at least one of the resistive elements adjustable, a variable internal supply voltage can be provided by the voltage regulator circuit.

Voltage down converter for multiple voltage levels

A plurality of flash electrically erasable programmable read only memory (EEPROM) cells is disclosed wherein metal lines couple both the sources and the drains of the flash cells. Reading of these flash cells is accomplished by applying a positive voltage to the source and reading from the associated metal source line. A soft erase scheme for increasing the threshold voltage of over-programmed flash cells is provided that prevents the leakage caused by applying a positive voltage to the drain.

Method to implement flash memory

Method for operating flash memory

A method of operating a pin of an in-system programmable logic device (ISPLD) which includes the steps of (1) applying a predetermined voltage to the pin when the ISPLD is in a set-up mode, and (2) maintaining the last voltage applied to the pin when the ISPLD is in a normal operating mode. The ISPLD is in the set-up mode when the logic of the ISPLD has not yet been configured, or is being configured. The ISPLD is in the normal operating mode after the logic of the ISPLD has been configured. A particular ISPLD includes a pin and a logic gate having a first input terminal coupled to the pin, a second input terminal coupled to receive a control signal, and an output terminal coupled to the pin. When the ISPLD is in the set-up mode, the control signal causes the logic gate to apply a predetermined voltage to the pin. When the ISPLD is in the normal operating mode, the control signal causes the logic gate to maintain the last applied voltage on the pin.

Bus-hold circuit having a defined state during set-up of an in-system programmable device

A voltage regulator circuit in an integrated circuit (IC) device such as a Complex Programmable Logic Device (CPLD) includes a reference voltage generator, a tuning circuit, and an output driver circuit. The reference voltage generator converts an external supply voltage provided to the IC device into a stable reference voltage. The tuning circuit converts the stable reference voltage into a desired internal supply voltage, such as the reduced voltage required by deep sub-micron transistors. The output driver circuit provides the desired internal supply voltage with sufficient current to properly power the circuits of the IC device. The tuning circuit includes an op-amp and resistive elements configured in a voltage divider configuration in the negative feedback loop of the op-amp. The output of the op-amp can be set to the desired internal supply voltage by properly sizing the resistive elements. By making at least one of the resistive elements adjustable, a variable internal supply voltage can be provided by the voltage regulator circuit.

A flash electrically erasable programmable read only memory (EEPROM) cell fabricated in a semiconductor substrate. A first well region having a first conductivity type is located in the semiconductor substrate. A second well region having a second conductivity type, opposite the first conductivity type, is located in the first well region. A non-volatile memory transistor and an independently controllable access transistor are fabricated in the second well region. The non-volatile memory transistor and the access transistor are connected in series, such that the source of the access transistor is coupled to the drain of the non-volatile memory transistor. The first well region, the second well region, the non-volatile memory transistor and the access transistor are biased such that electrons are transferred from the first well region to a floating gate of the non-volatile memory transistor by Fowler-Nordheim tunneling during an erase mode, and electrons are transferred from the floating gate of the non-volatile memory transistor through the access transistor by Fowler-Nordheim tunneling during a program mode. None of the biasing voltages exceed 12 Volts, thereby enabling the flash EEPROM cell to operate in a 3.3 Volt system. In one embodiment, an array of flash EEPROM cells are fabricated in the second well region.

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Sunnyvale, CA, United States of America

Robert A Olah