Finisar Corporation

Honeywell G.m.b.h.

Other

Honeywell International Inc.

The Boeing Company

Martin Family Trust

Robert A Morgan

James Allen Cox

Eva M Strzelecki

Robert R Rice

George L Matlock

Yue Liu

Richard A Skogman

Neil F Ruggieri

James C Nohava

Eva M B Strzelecka

J Stanley Whiteley

Lynn T Beckwith

Teresa M Marta

This disclosure is generally concerned with optical systems that employ guided-mode grating resonant reflector filters ('GMGRF') to facilitate wavelength and/or polarization selectivity in the optical system. In one example, an optical system is provided that includes first and second tunable detectors. Each of the tunable detectors includes a GMGRF that is tuned to select a corresponding optical wavelength and/or polarization of an optical data channel, such that the optical wavelength and/or polarization associated with the first tunable detector is different from the optical wavelength and/or polarization associated with the second tunable detector. In this way, an array of tunable detectors can be employed to select some or all of the wavelengths and/or polarizations of an optical data signal having a plurality of data channels.

Tunable detector

A vertical cavity surface-emitting laser (VCSEL) is disclosed. The VCSEL includes a layer that at least partially defines an optical cavity having an optical axis. The VCSEL further includes a resonant reflector layer extending across at least part of the optical cavity. The resonant reflector layer has a refractive index that does not abruptly change laterally across the optical cavity. The refractive index of the resonant reflector layer includes contributions from a first material having a first refractive index and a second material having a second refractive index. At least one of the first material and the second material includes a polymer.

Laser with resonant reflector

Methods are disclosed for forming optoelectronic devices. In one example of such a method, a substrate is provided and a partially conductive bottom mirror formed thereon. An active region is then formed on the bottom mirror, and a top mirror formed on the active region. A gain guide is then formed in the top mirror. Finally, a substantially dielectric isolation layer, as well as a resonant reflector, are formed on the top mirror. The isolation layer is interposed between the resonant reflector and the top mirror, and the isolation layer is formed so as to substantially prevent energy in an evanescent tail of a guided mode associated with the resonant reflector from entering the top mirror.

Method for forming an optoelectronic device having an isolation layer

In one exemplary embodiment of the invention, a method is employed that is directed to forming a resonant reflector on an optoelectronic device, such as a semiconductor laser for example. The exemplary method involves depositing a first material layer on the top layer of the optoelectronic device, where the first material layer having a refractive index and a thickness of about an odd multiple of a quarter of a wavelength to which the optoelectronic device is tuned. A patterned region is then created that extends at least partially into the first material layer. Selected patterned regions are at least partially filled with a second material that has a refractive index that is greater than the refractive index of the first material layer. Finally, a third layer, having a refractive index greater than the refractive index of the first material layer, is deposited immediately adjacent the first material layer.

Method for producing laser with resonant reflector

Methods for sealing or passivating the edges of chips such as vertical cavity surface emitting lasers (VCSEL) is disclosed. One method includes oxidizing the edges of die at the wafer level prior to cutting the wafer into a plurality of die. This may be accomplished by etching a channel along the streets between die, followed by oxidizing the channel walls. The oxidation preferably oxidizes the aluminum bearing layers that are exposed by the channel walls inward for distance. Aluminum bearing layers, including AlAs and AlGaAs, may be oxidized to a stable native oxide that is resistant to further oxidation by the environment. After oxidation, the wafer can be cut along the channels into a number of die, each having a protective oxide layer on the side surfaces.

Protective side wall passivation for VCSEL chips

An optical system that includes at least two optical emitters and/or optical receivers that have a corresponding guided-mode grating resonant reflector filter (GMGRF). Each GMGRF is preferably tuned to a unique wavelength and/or polarization by adjusting selected GMGRF parameters, such as the grating period and/or the thickness of the grating or other layers. One advantage of this construction is that the various optical emitters and/or optical receivers may be finely tuned, often lithographically, to provide fine wavelength resolution and/or polarization control. For WDM and WDD applications, this may allow closely-spaced optical transmission channels, and may simplify the wavelength-selective WDM and WDD operations required for simultaneous transmission of the channels.

Resonant reflector for increased wavelength and polarization control

An optoelectronic device that provides isolation between a resonant reflector and an adjacent conducting layer of the optoelectronic device. Isolation may be accomplished by providing a buffer or cladding layer between the resonant reflector and the adjacent conducting layer of the optoelectronic device. The cladding or buffer layer is preferably sufficiently thick, or has a sufficiently low refractive index relative to the refractive index of the waveguide of the resonant reflector, to substantially prevent energy in the evanescent tail of the guided mode in the waveguide from entering the adjacent conductive layer of the optoelectronic device.

Resonant reflector for use with optoelectronic devices

An electron beam pumped semiconductor laser screen and an associated fabrication method are described which provide a display screen that has a relatively long operating lifetime, is less expensive to produce, and operates at lower electron voltages and near room temperature conditions. The laser screen includes a multi quantum well active gain region having quantum wells of GaInP and barrier layers of (Al Ga )InP, thereby permitting operation in the visible, red spectrum. Moreover, the first layer epitaxially grown on the sacrificial substrate is an etch stop layer of (Ga Al ) In P that acts as an etch stop during the subsequent etching of the sacrificial substrate and may also be used to adjust the cavity length to the correct resonance condition. The laser screen also includes an output mirror having alternating layers of two different compositions of Ga Al As that are epitaxially grown on the multi quantum well active gain region. The output mirror can also include a thin, final layer of GaAs to cap the structure and prevent degradation of the Ga Al As layers. The semiconductor laser screen also includes a carrier that is affixed to the output mirror. Further, the laser screen includes a metallic mirror and, in one embodiment, a hybrid metallic-dielectric mirror on the etch stop layer opposite the output mirror. As such, a laser cavity is defined between the output mirror and the metallic mirror. The semiconductor laser screen may be integrated into an electron beam pumped semiconductor laser which forms the basis for a projection display. A fabrication method is also provided.

Electron beam pumped semiconductor laser screen and associated fabrication method

Improved resonant reflectors are provided for increased mode control of optoelectronic devices. Some of the resonant reflectors provide improved mode control while not requiring significant additional processing steps, making them ideal for commercial applications. Other resonant reflectors reduce or eliminate abrupt changes in the reflectively of the resonant reflector across an optical cavity of an optoelectronic device, allowing them to reduce or eliminate undesirable diffraction effects that are common in many resonant reflectors.

Spatially modulated reflector for an optoelectronic device

A zero feed interrupt sheet stacker conveying an uninterrupted stream of sheets in which a sheet accumulator catches holds and deposits a stack of sheets upon a load receiving device. The accumulator includes a curtain which is extended into the stream of sheets at a selected point between two sheets. The curtain type apparatus provides a platform in which the portion of the platform in contact with the carried sheets does not move relative to the sheet while it is extending, during holding, or during retraction of the platform.

Zero feed interrupt sheet stacker

Optoelectronic devices such as VCSEL and RCPD devices that have integrated resonant reflectors. The integrated resonant reflector may be made conductive so that bias current can pass therethrough. This may allow more flexibility in the design of the VCSEL and RCPD devices. Since making the resonant reflector more conductive typically reduces the overall reflectivity of the resonant reflector, the resonant reflector may be provided in combination with a Distributed Bragg Reflector (DBR) mirror to achieve the desired overall reflectance for a VCSEL or RCPD design. A broad bandwidth resonant reflector may also be provided. The bandwidth may be sufficiently wide to increase the reliability of data communication between such devices, and may be sufficiently narrow to maintain adequate mode control and mode stability. These devices may be used to support polarization-, space- and/or wavelength-division multiplexing applications.

Resonant reflector for improved optoelectronic device performance and

A monolithic transceiver that includes both a vertical cavity surface emitting laser (VCSEL) and a resonant cavity photodetector (RCPD) formed therein. The monolithic transceiver may also be an array of VCSEL and RCPD devices. The monolithic transceiver may be an integrated circuit, and may include a substrate layer. Both the vertical cavity surface emitting laser and the resonant cavity photodetector may be grown or otherwise formed on the substrate layer using standard processing techniques. Because standard processing techniques may be used, the present invention may provide a highly manufacturable transceiver, with independently controlled laser and photodetector characteristics.

Growing community of inventors

Plymouth, MN, United States of America

Robert A Morgan