Si Bond L.l.c.

Monsanto Company

Memc Electronic Materials, Inc.

Robert A Craven

Subramanian Srikanteswara Iyer

Ronald D Bartram

David I Golland

Mark L Mastroianni

Emil Baran

Robert J Falster

Gabriella Borionetti

Arthur J Ackermann

A single-etch stop process for the manufacture of silicon-on-insulator wafers. The process includes forming a silicon-on-insulator bonded wafers comprising a substrate layer, an oxide layer, a device layer, and a device wafer. The device layer is situated between the device wafer and the oxide layer and the oxide layer is between the device layer and the substrate layer. The device wafer has a p.sup.+ or n.sup.+ conductivity type and a resistivity ranging from about 0.005 ohm-cm to about 0.1 ohm-cm. A portion of the device wafer is removed from the silicon-on-insulator bonded wafers and the remaining portion of the device wafer has a defect-free surface after such removal. The remaining portion of the device wafer is then etched to expose the device layer.

Single-etch stop process for the manufacture of silicon-on-insulator

A process for stripping the outer edge of a bonded BESOI wafer. The bonded BESOI wafer comprises a handle wafer, an oxide layer on one surface of the handle wafer, a device layer bonded to the oxide layer, and a p.sup.+ etch-stop layer on the device layer having an exposed face. The process comprises masking the exposed face of the p.sup.+ etch-stop layer, and abrading the periphery of the BESOI wafer to remove edge margins of the p.sup.+ etch-stop layer and device layer.

Edge stripped BESOI wafer

Process for stripping outer edge of BESOI wafers

A single-etch stop process for the manufacture of silicon-on-insulator substrates. The process includes forming a silicon-on-insulator bonded substrate comprising a handle wafer, a device wafer, a device layer having a thickness of between about 0.5 and 50 micrometers, and an oxide layer with the device layer being between the device wafer and the oxide layer and the oxide layer being between the device layer and the handle wafer, the device wafer having a boron concentration of at least about 1.times.10.sup.18 boron atoms/cm.sup.3 and a resistivity of about 0.01 to about 0.02 ohm-cm. A portion of the device wafer is mechanically removed from the silicon-on-insulator bonded substrate wherein the device wafer has a total thickness variation across the surface of the wafer of less than about 2 micrometers and a defect-free surface after the mechanical removal step. The defect-free surface of the device wafer is thereafter etched away to expose the device layer, and the exposed device layer is polished to produce a silicon-on-insulator substrate having a device layer the total thickness variation of which does not exceed 10% of the maximum thickness of the device layer.

A method for detecting transition metal contamination in or on equipment and fluids used or being evaluated for use in the manufacture, handling, or shipping of silicon wafers and electronic devices manufactured on silicon wafers. A contamination monitor wafer having an average minority carrier lifetime greater than about 250 microseconds is processed using one or more pieces of equipment or fluids. As part of, or subsequent to the processing step, the contamination monitor wafer is exposed to a temperature of at least 600.degree. C. and the minority carrier lifetime values of the contamination monitor wafer is thereafter determined. To insure that the recombination process is dot dominated by the effects of oxygen precipitates, the contamination monitor wafer should have an oxygen precipitate density of less than 10.sup.8 oxygen precipitates per cubic centimeter before and after being exposed to said temperature of at least 600.degree. C.

Method for detecting sources of contamination in silicon using a

This invention is directed to a hydraulic multiplex unit for receiving continuously one or more samples of liquid from a liquid purification system of distribution system and redirecting such sample or samples randomly or in sequence to one or more analytical instruments. The sample collecting system and multiplex unit is periodically backflushed with ozone to maintain the collection and analysis system clean of impurities, particles and the like which adversely affect the composition of the fluid samples.

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Olivette, MO, United States of America

Robert A Craven