International Business Machines Corporation

Robb Allen Johnson

Louis DeWolf Lanzerotti

David Louis Harame

James Stuart Dunn

Ryan Wayne Wuthrich

Stephen Arthur St Onge

Jack Oon Chu

Kathryn Turner Schonenberg

David R Greenberg

Basanth Jagannathan

Douglas Duane Coolbaugh

Jeffrey Bowman Johnson

Marc Waine Cantell

Brian L Tessier

Steven H Voldman

Arne Watson Ballantine

James William Adkisson

Kirk David Peterson

Peter John Geiss

Glen L Miles

Shwu-Jen Jeng

Tina Jane Wagner

Jeffrey D Gilbert

Donna Kaye Johnson

James J Toomey

Matthew D Gallagher

Douglass Duane Coolbaugh

A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.

Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology

The present invention provides a unique device structure and method that provides increased transistor performance in integrated bipolar circuit devices. The preferred embodiment of the present invention provides improved high speed performance by providing reduced base resistence. The preferred design forms the extrinsic base by diffusing dopants from a dopant source layer and into the extrinsic base region. This diffusion of dopants forms at least a portion of the extrinsic base. In particular, the portion adjacent to the intrinsic base region is formed by diffusion. This solution avoids the problems caused by traditional solutions that implanted the extrinsic base. Specifically, by forming at least a portion of the extrinsic base by diffusion, the problem of damage to base region is minimized. This reduced damage enhances dopant diffusion into the intrinsic base. Additionally, the formed extrinsic base can have improved resistence, resulting in an improved maximum frequency for the bipolar device. Additionally, the extrinsic base can be formed with a self-aligned manufacturing process that reduces fabrication complexity.

Diffused extrinsic base and method for fabrication

An epitaxial base bipolar transistor comprising an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on the semiconductor surface; a raised extrinsic base on the surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein said insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in said single crystal substrate, wherein said emitter diffusion has an emitter diffusion junction depth, and wherein said emitter extends to said substrate surface and said base extends to said substrate surface, wherein said emitter to base surface height difference is less than 20% of said emitter junction depth is provided as well as methods for fabricating the same.

Epitaxial base bipolar transistor with raised extrinsic base

A process of forming a nitride film on a semiconductor substrate including exposing a surface of the substrate to a rapid thermal process to form the nitride film.

Structure and method for formation of a blocked silicide resistor

An epitaxial base bipolar transistor including an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on a portion of the single crystal layer; a raised extrinsic base on a surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein the insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in the single crystal layer, wherein the emitter diffusion has an emitter diffusion junction depth.

Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base

The preferred embodiment of the present invention provides a buried layer that improves the latch up immunity of digital devices while providing isolation structures that provide noise isolation for both the digital and analog devices. The buried layer of the preferred embodiment is formed to reside within or below the subcollector region in the transistor. Additionally, in the preferred embodiment the subcollector is isolated from buried layer outside the transistor region by deep isolation trenches formed at the edges of the subcollector. Additionally, an array of deep isolation trenches provides increased isolation between devices where needed. Thus, the preferred embodiment of the present invention provides an integrated circuit structure and method that provides improved latchup immunity while also providing improved noise tolerance.

Deep trench-buried layer array and integrated device structures for noise isolation and latch up immunity

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South Burlington, VT, United States of America

Robb Allen Johnson