Nxp B.v.

Koninklijke Philips Corporation N.v.

Silergy Corp.

Rob Van Dalen

Godefridus A M Hurkx

Maarten Jacobus Swanenberg

Christelle Rochefort

Gerrit Elbert Johannes Koops

Vitali Souchkov

Sergio Masferrer Oncala

Erwin Hijzen

Tony Vanhoucke

Anco Heringa

Adrianus W Ludikhuize

Raymond J E Hueting

Jan Willem Slotboom

Prabhat Agarwal

Gerhard Koops

Dusan Golubovic

Padraig O'Mathuna

Inesz Emmerik-Weijland

Paulus J T Eggenkamp

Priscilla W M Boos

Erik Spaan

Priscilla Boos

Gerrit E J Koops

A thyristor is disclosed comprising: a first region of a first conductivity type; a second region of a second conductivity type and adjoining the first region; a third region of the first conductivity type and adjoining the second region; a fourth region of the second conductivity type and comprising a first segment and a second segment separate from the first segment, the first segment and second segment each adjoining the third region; a first contact adjoining the first region; a second contact adjoining the first segment; and a trigger contact adjoining the second segment and separate from the second contact.

Thyristor, a method of triggering a thyristor, and thyristor circuits

A semiconductor die is disclosed comprising a lateral semiconductor device on an upper major surface of a substrate, the integrated circuit comprising a silicon layer over the substrate, a recess in the silicon layer, a layer of LOCOS silicon oxide within the recess and having a grown upper surface which is coplanar with the surface of an un-recessed portion of the silicon layer, wherein the silicon layer beneath the recess has a non-uniform lateral doping profile, and is comprised in a drift region of the lateral semiconductor device. A method of making such a die is also disclosed, as is an integrated circuit and a driver circuit.

Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same

Ambient light is sensed for use in determining luminous flux. According to an example embodiment, ambient light is sensed using two light sensor arrangements that respectively respond differently to light of different relative wavelengths. The output of the sensors is nonlinearly combined to generate data indicative of the luminous flux. This luminous flux data is used to generate a control output for controlling an electronic display.

Light sensor arrangement

A light sensor is used to detect ambient light conditions. According to an example embodiment, a light sensor () detects color temperature and, in some instances, intensity characteristics of ambient light () in an environment and uses these detected characteristics () to determine the location of the sensor relative to natural and artificial light sources. This location determination is used to selectively operate circuits in a device such as a hand-held telephone, computer device or personal data assistant (PDA).

Indoor/outdoor detection

A light sensor arrangement is used to detect ambient light conditions. According to an example embodiment, a light detector arrangement (e.g.,) generates an output in response to light incident thereupon. An averaging-type circuit (e.g.,) samples the generated output for overlapping time intervals, and combines the sampled output to form a new output that characterizes the incident light. The overlapping time intervals(e.g.,-) are chosen such that the new output is generally flicker-free for incident light generated using one of at least two different power supply frequencies.

Light sensor noise suppression arrangement and method therefor

Disclosed is a photosensitive system including a gated photodiode having at least one field plate and a cathode and an output buffer having an input coupled to the gated photodiode for reducing the impedance of the photodiode signal and having an output for providing the reduced impedance signal. The output is electrically connected to the at least one field plate. A device including such a photosensitive system is also disclosed.

Photosensitive system including an output buffer coupled to a gated photodiode for reducing an impedance of the photodiode signal

A light sensor and light sensing system to detect an intensity of incident light and an angle of incidence of the incident light. The light sensor includes a dielectric layer, a plurality of photo detectors coupled relative to the dielectric layer, and a plurality of stacks of opaque slats embedded within the dielectric layer. The dielectric layer is substantially transparent to the incident light. The photo detectors detect the incident light through the dielectric layer. The stacks of opaque slats are approximately parallel to an interface between the dielectric layer and the photo detectors. The stacks of opaque slats define light apertures between adjacent stacks of opaque slats. At least some of the stacks of opaque slats are arranged at a non-zero angle relative to other stacks of the opaque slats.

Light sensor with intensity and direction detection

An optocoupler device facilitates on-chip galvanic isolation. In accordance with various example embodiments, an optocoupler circuit includes a silicon-on-insulator substrate having a silicon layer on a buried insulator layer, a silicon-based light-emitting diode (LED) having a silicon p-n junction in the silicon layer, and a silicon-based photodetector in the silicon layer. The LED and photodetector are respectively connected to galvanically isolated circuits in the silicon layer. A local oxidation of silicon (LOCOS) isolation material and the buried insulator layer galvanically isolate the first circuit from the second circuit to prevent charge carriers from moving between the first and second circuits. The LED and photodetector communicate optically to pass signals between the galvanically isolated circuits.

Optocoupler circuit

The invention relates to a semiconductor device with a substrate () and a semiconductor body () with a heterojunction bipolar, in particular npn, transistor with an emitter region (), a base region () and a collector region (), which are provided with, respectively, a first, a second and a third connection conductor (), and wherein the bandgap of the base region () is smaller than that of the collector region () or of the emitter region (), for example by the use of a silicon-germanium mixed crystal instead of pure silicon in the base region (). Such a device is characterized by a very high speed, but its transistor shows a relatively low BVeeo. In a device () according to the invention the doping flux of the emitter region () is locally reduced by a further semiconductor region () of the second conductivity type which is embedded in the emitter region (). In this way, on the one hand, a low-impedance emitter contact is ensured, while locally the Gummel number is increased without the drawbacks normally associated with such an increase. In this way, the hole current in the, npn, transistor is increased and thus the gain is decreased. The relatively high gain of a Si&#x2014;Ge transistor is responsible for the low BVCeOf which is consequently avoided in a device () according to the invention. Preferably the further semiconductor region () is recessed in the emitter region (1) and said emitter region () preferably comprises a lower doped part that borders on the base region () and that is situated below the further semiconductor region (). The invention also comprises a method of manufacturing a semiconductor device () according to the invention.

Semiconductor device and method of manufacturing such a device

A semiconductor device has active region () and edge termination region () which includes a plurality of floating field regions (). Field plates () extend in the edge termination region () inwards from contact holes () towards the active region () over a plurality of floating field regions (). Pillars () may be provided.

Edge termination for semiconductor device

A method of fabricating high-voltage semiconductor devices, the semiconductor devices and a mask for implanting dopants in a semiconductor are described.

Method of providing enhanced breakdown by diluted doping profiles in high-voltage transistors

A semiconductor device includes a substrate of a first conductivity type, and a first semiconductor region that includes a plurality of sub-regions of the first conductivity type that have a first doping concentration and a further semiconductor region of a second conductivity type opposite to the first conductivity type. The further semiconductor region separates the sub-regions from each other and the first semiconductor region is located on the substrate. The semiconductor device further includes a second semiconductor region of the first conductivity type located on the first semiconductor region, a third semiconductor region of the second conductivity type located on the second semiconductor region, and a fourth semiconductor region of the first conductivity type located on the third semiconductor region. The sub regions extend from the second semiconductor region into the substrate, and the thickness and the doping concentration of the second and the third semiconductor region are such that these regions are completely depleted during operation of the device.

Punchthrough diode and method of manufacturing thereof

The invention relates to a so-termed punchthrough diode () with a stack of, for example, n++, n&#x2212;, p+, n++ regions (). In the known diode, these semiconductor regions () are positioned in said order on a substrate (). The diode is provided with connection conductors (). Such a diode does not have a steep I-V characteristic and is therefore less suitable as a TVSD (=Transient Voltage Suppression Device). In particular at voltages below 5 volts, a punchthrough diode could form an attractive alternative as TVSD. In a punchthrough diode () according to the invention, a part of the first semiconductor region () bordering on the second semiconductor region () comprises a number of sub-regions (A) which are separated from each other by a further semiconductor region () of the second, for example p+, conductivity type which is electrically connected to the first connection conductor (). Such a diode has a very steep I-V characteristic, is very suitable as a TVSD and functions very well at an operating voltage below 5 volts. Preferably, the further region () comprises a part (A) which is wider than the other parts thereof. The regions () may be present in two different orders within a stack positioned on the substrate (), each of said orders having certain advantages.

A semiconductor device has an edge termination region () having a plurality of trenches (). Conductive material () and insulating material () is formed at the trenches, and surface implants () are formed on either side of the trenches. A conductive bridge () connects the surface implants () to allow equilibrium to be reached in reverse bias.

Semiconductor device with edge structure

A semiconductor device, such as a power MOSFET, Schottky rectifier or p-n rectifier, has a voltage-sustaining zone ( ) between a first ( ) and second ( ) device regions adjacent to respective first and second opposite surfaces ( ) of a semiconductor body . Trenched field-shaping regions ( ) including a resistive path ( ) extend through the voltage-sustaining zone ( ) to the underlying second region ( ), so as to enhance the breakdown voltage of the device. The voltage-sustaining zone ( ) and the trenched field-shaping regions ( ) are present in both the active device area (A) and in the peripheral area (P) of the device. A further resistive path ( ) extends across the first surface ( ), outwardly over the peripheral area (P). This further resistive path ( ) provides a potential divider that is connected to the respective resistive paths ( ) of successive underlying trenched field-shaping regions ( ) in the peripheral area (P). Thereby a gradual variation is achieved in the potential (V ) applied by the successive trenched field-shaping regions ( ) in the peripheral area (P) of the voltage-sustaining zone ( ). This advantageous peripheral termination reduces device susceptibility to deviations in the field profile in this peripheral area (P).

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Eindhoven, Netherlands

Rob Van Dalen