Ampleon Netherlands B.v.

Nxp B.v.

Rob Mathijs Heeres

Josephus Henricus Bartholomeus Van Der Zanden

Josephus Van Der Zanden

Yi Zhu

Vittorio Cuoco

Albert Gerardus Wilhelmus Philipus Van Zuijlen

Petra Christina Anna Hammes

Lukas Frederik Tiemeijer

Freerk Van Rijs

Iouri Volokhine

John Joseph Hug

Johannes Adrianus Maria De Boet

Marnix Bernard Willemsen

Ronald Koster

Niels Kramer

Jan Anne Van Steenwijk

Daniel Maassen

Freek Van Rijs

Example embodiments relate to amplifiers having improved stability. One example amplifier includes a conductive substrate, an input terminal arranged spaced apart from the conduct substrate, a first bondwire attachment structure electrically connected to or integrally formed with the input terminal, a first input matching capacitor having a non-grounded terminal and a grounded terminal, a second bondwire attachment structure electrically connected to the non-grounded terminal of the first input matching capacitor, a first semiconductor die on which a radiofrequency power transistor is arranged that has an output electrically connected to a fourth bondwire attachment structure, an output matching capacitor having a non-grounded terminal and a grounded terminal (the non-grounded terminal being electrically connected to a fifth bondwire attachment structure), an output terminal arranged spaced apart from the conductive substrate, a sixth bondwire attachment structure electrically connected to or integrally formed with the output terminal, and multiple bondwire assemblies.

Amplifier having improved stability

The present disclosure relates to a packaged radiofrequency (RF) power amplifier. The present disclosure further relates to a semiconductor die that is used in such a power amplifier and to an electronic device or system that comprises the semiconductor die and/or power amplifier. According to the disclosure, the semiconductor die comprises a second drain bond assembly arranged spaced apart from the first drain bond assembly and electrically connected thereto, wherein the second drain bond assembly is arranged closer to the input side of the semiconductor die than the first drain bond assembly. The RF power amplifier comprises a first plurality of bondwires which extend between the first drain bond assembly and the output lead, and a second plurality of bondwires which extend from the second drain bond assembly to a first terminal of a grounded capacitor.

Packaged RF power amplifier

A package is provided. The package comprises a die and an impedance matching network. The die has a first terminal and a second terminal. The impedance matching network is coupled to the second terminal and comprises a first inductor and a first capacitor. The first inductor comprises first bond wire connections coupled between the second terminal and a first bond pad on the die, and second bond wire connections coupled between the first bond pad and a second bond pad coupled to the first capacitor.

Impedance matching configuration

A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.

Transistor arrangement

In RF power transistors, the current distribution along edges of the transistor die may be uneven leading to a loss in efficiency and in the output power obtained, resulting in degradation in performance. When multiple parallel dies are placed in a package, distribution effects along the vertical dimension of the dies are more pronounced. A RF power device () for amplifying RF signals is disclosed which modifies the impedance of a portion of the respective one of the input lead and the output lead and redistributes the current flow at an edge of the transistor die.

RF power device

A compensation network for a radiofrequency transistor is disclosed. The compensation network comprises first and second bonding bars for coupling to a first terminal of the RF transistor and a compensation capacitor respectively; one or more bond wires coupling the first and second bonding bars together; and a compensation capacitor formed from a first set of conductive elements coupled to the second bonding bar, the first set of conductive elements interdigitating with a second set of conductive elements coupled to a second terminal of the RF transistor.

Compensation network for RF transistor

An RF power amplifier according to the invention comprises a plurality of parallel output transistors (HBT,to HBT,,N) connected to a power supply. A plurality of base resistors (Rb,to Rb,,N) for the output transistors (HBT,to HBT,,N) and a plurality of input capacitors (Cb,to Cb,N), each coupled in parallel to receive an RF signal input and connected via at least one additional passive component to the inputs of each corresponding output transistor (HBT,to HBT,,N), are provided An output for an RF output signal is obtained from the parallel connection of the output transistors (HBT,to HBT,,N). The transistors (HBT,to HBT,,N) are heterojunction bipolar transistors.

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Nijmegen, Netherlands

Rob Mathijs Heeres