Ultratech, Inc.

Ritwik Bhatia

Andrew M Hawryluk

Ganesh Sundaram

Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550&#xb0; C. and preferable below 350&#xb0; C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500&#xb0; C. for less than 12 msec.

Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations

Masking methods for atomic-layer-deposition processes for electrode-based devices are disclosed, wherein solder is used as a masking material. The methods include exposing electrical contact members of an electrical device having an active device region and a barrier layer formed by atomic layer deposition. This includes depositing solder elements on the electrical contact members, then forming the barrier layer using atomic layer deposition, wherein the barrier layer covers the active device region and also covers the solder elements that respectively cover the electrical contact members. The solder elements are then melted, which removes respective portions of the barrier layer covering the solder elements. Similar methods are employed for exposing contacts when forming layered capacitors.

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Newtonville, MA, United States of America

Ritwik Bhatia