International Rectifier Corporation

Ritu Sodhi

Donald He

Daniel Marvin Kinzer

Ling Ma

Kyle A Spring

Davide Chiola

Naresh Thapar

Ashita Mirchandani

Adam I Amali

Siddharth Kiyawat

Mark Pavier

A trench power semiconductor device including a recessed termination structure.

Trench MOSFET technology for DC-DC converter applications

A semiconductor device including a schottky device and a trench type semiconductor switching device such as a MOSFET formed in a common die.

Integrated fet and schottky device

Integrated FET and schottky device

A process for manufacturing a semiconductor device of the trench variety with reduced feature sizes and improved characteristics which process includes forming a termination structure having a field oxide disposed in a recess below the surface of the semiconductor die in which the active elements of the device are formed, and forming source regions after the major thermal steps have been performed.

Method for manufacturing a semiconductor device with a trench termination

A power MOSFET has a plurality of spaced rows of parallel coextensive trenches. The trenches are lined with a gate oxide and are filled with conductive polysilicon. Spaced narrow polysilicon strips overlie the silicon surface and connects adjacent trenches to one another. The source contact is made at a location remote from the trenches and between the rows of trenches. The trenches are 1.8 microns deep, are 0.6 microns wide and are spaced by about 0.6 microns or greater. The device has a very low figure of merit and is useful especially in low voltage circuits.

Trench FET with non overlapping poly and remote contact therefor

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Redondo Beach, CA, United States of America

Ritu Sodhi