Sony Corporation

Ritsuo Takizawa

Mitsuru Sato

Hideshi Abe

Yoshiaki Kitano

Nobuhiro Karasawa

Kiyoshi Hirata

Hiroaki Ohki

Jun Kuroiwa

Mitsuru Yamashita

Katsunori Kokubun

Hideo Kanbe

Masanori Ohashi

Takahisa Kusaka

Takayoshi Higuchi

Taichi Natori

Takayuki Shimozono

A solid-state image pickup device is provided which includes a plurality of pixels provided in a semiconductor substrate, the pixels including a plurality of photoelectric conversion portions and MOS transistors which selectively read out signals therefrom, at least one organic photoelectric conversion film on the photoelectric conversion portions, and an isolation region provided in the organic photoelectric conversion film at a position corresponding to between the pixels to perform optical and electrical isolation.

Solid-state image pickup device having an organic photoelectric conversion film, method for manufacturing the same, and image pickup apparatus

Solid-state image pickup device with isolated organic photoelectric conversion film portions, method for manufacturing the same, and image pickup apparatus

A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

Solid-state imaging device

A SOI substrate includes a silicon substrate, a silicon oxide layer arranged on the silicon substrate, a silicon layer arranged on the silicon oxide layer, a gettering layer arranged in the silicon substrate, and a damaged layer formed of an impurity-doped region arranged in the silicon oxide layer.

SOI substrate and method for producing the same, solid-state image pickup device and method for producing the same, and image pickup apparatus

There is provided a solid-state imaging device including a plurality of pixels that are provided on a semiconductor substrate, and that include a plurality of photoelectric-conversion units and metal oxide semiconductor transistors that selectively read signals from the plurality of photoelectric-conversion units, an organic-photoelectric-conversion film disposed on the plurality of photoelectric-conversion units, and an organic-color-filter layer disposed on the plurality of photoelectric-conversion units. Only a signal corresponding to a first color is extracted through the organic-photoelectric-conversion film. Signals corresponding to a plurality of colors not including the first color are extracted by absorption spectroscopy using the organic-color-filter layer.

Solid-state imaging device with an organic photoelectric conversion film and imaging apparatus

Solid-state imaging device and method for manufacturing thereof as well as driving method of solid-state imaging device

A solid-state imaging device having an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

Solid-state imaging device and driving method of solid-state imaging device

Solid-state imaging device with biased light shielding film

A solid-state imaging device that has a satisfactory noise characteristic and readout characteristic is provided by improving the noise characteristic and readout characteristic in a well balanced way. The solid-state imaging device has such a structure that an electrodefor reading a signal charge is provided on one side of a light-receiving sensor portionconstituting a pixel; a predetermined voltage signal V is applied to a light-shielding filmformed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor areais formed in the center on the surface of a first-conductivity-type semiconductor areaconstituting a photo-electric conversion area of the light-receiving sensor portion; and areas(A,B) containing a lower impurity concentration than that of the second-conductivity-type semiconductor areais formed on the surface of the first-conductivity-type semiconductor areaat the end on the side of the electrodeand at the opposite end on the side of a pixel-separation area

Method of driving solid state image sensing device

White defects caused by a dark-current of a solid-state imaging device is reduced by effectively bringing out gettering capability of a buried getter sink layer. A buried getter sink layer is formed by introducing to the semiconductor substrate a substance of a second element which is a congener of a first element composing a semiconductor substrate, a crystal growth layer is formed by crystal growing a substance of the first element on a surface of the semiconductor substrate, and a solid-state imaging element is formed inside and on the crystal growth layer at a lower temperature than that in the case of forming an extrinsic getter sink layer by introducing a substance of a third element of a different group from the first element on a back surface of the semiconductor substrate. Alternately, a solid-state imaging element is formed at a lower temperature than that in the case of forming an extrinsic getter sink layer on a surface of the crystal growth layer by oxidization in an atmosphere of a gas containing hydrochloric acid.

Production method for solid imaging device

Quality of epitaxial semiconductor substrates treated by carbon gettering is evaluated precisely and quickly to use only good-quality ones for manufacturing good-property semiconductor devices, such as solid-state imaging devices. After carbon implanted regions and carbon non-implanted regions are made along the surface of a Si substrate by selectively ion-implanting carbon, a Si epitaxial layer is grown on the surface of the Si substrate to obtain a Si epitaxial substrate. Recombination lifetime or surface photo voltage is measured at a portion of the Si epitaxial layer located above the carbon non-implanted region, and the result is used to evaluate acceptability of the Si epitaxial substrate. Thus, strictly selected good-quality Si epitaxial substrates alone are used to manufacture solid-state imaging devices or other semiconductor devices.

Epitaxial semiconductor substrate, manufacturing method thereof, manufacturing method of semiconductor device and manufacturing method of solid-state imaging device

There is a provided a method of manufacturing a semiconductor substrate in which generation of bright points after epitaxial growth is reduced, and there is provided a method of manufacturing a solid-state image-pickup device in which illuminated defects are reduced. In fabrication of an epitaxial semiconductor substrate for a solid-state image-pickup device, an epitaxial layer is grown at a growth temperature of 1,120&deg; C. or lower. Pre-annealing is preferably performed at a temperature of 900&deg; C. or lower before hydrogen annealing.

Method of manufacturing semiconductor substrate and method of manufacturing solid-state image-pickup device

In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1.times.10.sup.16 atoms/cm.sup.3 or more.

Growing community of inventors

Tokyo, Japan

Ritsuo Takizawa