3-5 Power Electronics Gmbh

Infineon Technologies Ag

Azur Space Solar Power Gmbh

Riteshkumar Bhojani

Volker Dudek

Jens Kowalsky

Hans-Joachim Schulze

Franz-Josef Niedernostheide

Roman Baburske

Daniel Fuhrmann

Josef Lutz

Thorsten Wierzkowski

A semiconductor having a n-doped cathode layer, a p-doped anode layer, and a drift region, arranged between the cathode layer and the anode layer, with a dopant concentration of at most 8&#xb7;10cm. The drift region has a lightly n-doped drift layer and a lightly p-doped drift layer, arranged between the n-doped drift layer and the anode layer, both drift layers each have a layer thickness of at least 5 &#x3bc;m. The cathode layer has a first section with a dopant concentration of at least 1&#xb7;10cmand a second section, arranged between the first section and the drift region, the second section has a layer thickness of at least 1 &#x3bc;m and a dopant concentration gradient that increases in the direction of the first section up to a dopant concentration maximum. The dopant concentration maximum is smaller or equal to the dopant concentration of the first section.

Stacked III-V semiconductor diode

A stacked III-V semiconductor diode comprising or consisting of GaAs, with a heavily n-doped cathode layer, a heavily p-doped anode layer, and a drift region arranged between the cathode layer and the anode layer with a dopant concentration of at most 8&#xb7;10cm, and a layer thickness of at least 10 &#x3bc;m, wherein the cathode layer has a delta layer section with a layer thickness of 0.1 &#x3bc;m to 2 &#x3bc;m and a dopant concentration of at least 1&#xb7;10cm.

A stacked III-V semiconductor diode comprising or consisting of GaAs with a highly n-doped cathode layer, a highly p-doped anode layer and a drift region arranged between the cathode layer and the anode layer, wherein the drift region has a low n-doped drift layer and a low p-doped drift layer, the n-doped drift layer is arranged between the p-doped drift layer and the cathode layer, both drift layers each have a layer thickness of at least 5 &#x3bc;m and, along the respective layer thickness, have a dopant concentration maximum of not more than 8&#xb7;10cm, the dopant concentration maxima of the two drift layers have a ratio of 0.1 to 10 to each other and a ratio of the layer thickness of the n-doped drift layer to the layer thickness of the p-doped drift layer is between 0.5 and 3.

A transistor device includes a first emitter region of a first doping type, a second emitter region of a second doping type, a body of the second doping type, a drift region of the first doping type, a field-stop region of the first doping type, at least one boost structure, and a gate electrode. The boost structure is arranged between the field-stop region and the second emitter region. The at least one boost structure includes a base region of the first doping type and at least one auxiliary emitter region of the second doping type separated from the second emitter region by the base region. An overall dopant dose in the drift region and the field-stop region in a current flow direction of the transistor device is higher than a breakthrough charge of a semiconductor material of the drift region and the field-stop region.

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Chemnitz, Germany

Riteshkumar Bhojani