Honeywell International Inc.

Ritesh P Shah

Diana L Morales

Jeffrey A Keller

Susan D Strothers

Vladimir M Segal

Janine K Kardokus

Chi Tse Wu

David E Steele

Anthony F Beier

Wuwen Yi

William R Turner

Jeff A Keller

The invention includes a non-magnetic physical vapor deposition target. The target has at least 30 atom percent total of one or more of Co, Ni, Ta, Ti, Pt, Mo and W, and at least 10 atom percent silicon. The target also has one phase and not more than 1% of any additional phases other than said one phase. In another aspect, the invention includes a non-magnetic physical vapor deposition target consisting essentially of Co and/or Ni, silicon, and one phase.

Physical vapor deposition targets

The invention includes a method of forming a heat treated sputtering target assembly. A backing plate is diffusion bonded to a sputtering target to produce a sputtering target assembly. The sputtering target assembly is heat treated to precipitation harden the backing plate of the assembly. The heat treatment includes heating and quenching, with the quenching being performed by immersing the backing plate in a quenchant without submerging the sputtering target.

Ni-plated target diffusion bonded to a backing plate and method of making same

Described is an in situ method for producing articles of metal aluminide or silicide by reactive sintering and vacuum hot pressing powders and products, such as sputtering targets, produced.

Sputtering targets comprising aluminides or silicides

Described is the production of a metal article with fine metallurgical structure and texture by a process that includes forging and rolling and control of the forging and rolling conditions. Also described is a metal article with a minimum of statically crystallized grain size and a uniform (100) cubic texture.

Tantalum-comprising articles

Intermetallic aluminides and silicides articles, such as sputtering targets, and methods of making same

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Liberty Lake, WA, United States of America

Ritesh P Shah